2SD1664 NPN Silicon General Purpose Transistor Elektronische Bauelemente R o H S C o m p lia n t P ro d u c t D D1 Features A E E1 SOT-89 b1 1 2 b 3 C e L Power dissipation o PCM : 0.5 W (Tamb= 25 C) e1 1.BASE Collector current 2.COLLECTOR ICM : 1 A 3.EMITTER Collector-base voltage V(BR)CBO : 40 V Operating & Storage junction Temperature O O Tj, Tstg : -55 C~ +150 C Dimensions In Millimeters Symbol Dimensions In Inches Min Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 Electrical Characteristics( Tamb=25OC unless otherwise specified) Parameter Symbol Test Conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 50AˈIE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mAˈIB =0 32 V Emitter-base breakdown voltage V(BR)EBO IE= 50AˈIC=0 5 V Collector cut-off current ICBO VCB= 20 V, IE=0 0.5 A Emitter cut-off current IEBO VEB= 4V, IC=0 0.5 A DC current gain hFE VCE= 3V, IC = 0.1A Collector-emitter saturation voltage VCE (sat) Transition frequency fT Output Capacitance Cob 390 82 I C= 500mA, IB= 50mA 0.4 VCE= 5V , IC= 50mA f=1MHz V 150 MHz 15 pF VCB= 10V, IE= 0 f=1MHz Classification of hFE Rank P Q R Range 82-180 120-270 180-390 Marking DAP DAQ DAR http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SD1664 Elektronische Bauelemente NPN Silicon General Purpose Transistor ELECTRICAL CHARACTERISTIC CURVES http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SD1664 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon General Purpose Transistor Any changing of specification will not be informed individual Page 3 of 3