2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics Low Collector Saturation Voltage, VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A 1 2 3 A E C Collector B C E 2 B 1 D F G Base H 3 K J L Emitter REF. MARKING A B C D E F CFR CFS Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction & Storage Temperature SYMBOL RATINGS UNIT VCBO VCEO VEBO IC PC TJ, TSTG 40 20 6 3 500 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector Output Capacitance *Pulse test: tP≦300µS, δ≦0.02 SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE* VCE(sat) * fT* COB 40 20 6 180 - 290 25 0.1 0.1 560 0.5 - V V V µA µA IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=30V, IE=0 VEB=5 V, IC=0 VCE=2V, IC= 100mA IC=2A, IB= 100mA VCE=2V, IC=-500mA, f=100MHz VCB=10V, IE=0, f=1MHz V MHz pF CLASSIFICATION OF hFE Rank Range Marking http://www.SeCoSGmbH.com/ 6-Nov-2009 Rev. B R S 180-390 CFR 270-560 CFS Any changes of specification will not be informed individually. Page 1 of 2 2SD2150 Elektronische Bauelemente 3 A, 40 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 6-Nov-2009 Rev. B Any changes of specification will not be informed individually. Page 2 of 2