2SD874A 1A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A 4 1 CLASSIFICATION OF hFE (1) 2 B C 3 E A E Product-Rank 2SD874A-Q 2SD874A-R 2SD874A-S Range 85~170 120~240 170~340 Marking YQ YR YS C B D F G H K J L Millimeter Min. Max. 4.40 4.60 3.94 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. A B C D E F REF. G H J K L Millimeter Min. Max. 0.40 0.58 1.50 TYP 3.00 TYP 0.32 0.52 0.35 0.44 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Junction & Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG 60 50 5 1 500 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown Emitter-Base Breakdown Boltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT COB 60 50 5 85 50 - 200 20 0.1 0.1 340 0.4 1.2 - V V V μA μA IC=10μA, IE=0 IC=2mA, IB=0 IE=10μA, IC=0 VCB=20V, IE=0 VEB=4 V, IC=0 VCE=10V, IC= 500mA VCE=5V, IC= 1A IC=500mA, IB= 50mA IC=500mA, IB= 50mA VCE=10V, IC=50mA, f=200MHz VCB=10V, IE=0, f=1MHz DC Current Gain Collector-Emitter Saturation Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 23-Feb-2011 Rev. A V V MHz pF Any changes of specification will not be informed individually. Page 1 of 2 2SD874A Elektronische Bauelemente 1A , 60V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2