3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE(1) Product-Rank 3DD13001-A 3DD13001-B Range 17~23 20~26 E C G H 3 Emitter J 1 REF. Base A B C D E Collector 2 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 F 1Base 2Collector 3Emitter REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC TJ, TSTG 600 400 7 0.2 750 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Fall time Storage time http://www.SeCoSGmbH.com/ 19-Aug-2011 Rev. A Symbol Min. Typ. Max. Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) fT tF tS 600 400 7 17 5 8 - - 100 200 100 26 0.5 1.2 0.3 1.5 V V V µA µA V V MHz µs µs Test Condition IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.1mA, IC=0 VCB=600V, IE=0 VCE=400V, IB=0 VEB=7V, IC=0 VCE=20V, IC=20mA VCE=10V, IC=0.25mA IC=50mA, IB=10mA IC=50mA, IB=10mA VCE=20V, IC=20mA, f =1MHz IB1= -IB2=5mA VCC=45V, IC=50mA Any changes of specification will not be informed individually. Page 1 of 2 3DD13001 Elektronische Bauelemente 0.2A , 600V NPN Plastic-Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2