SECOS BAS16T

BAS16T/BAW56T/BAV70T/BAV99T
Plastic-Encapsulate Diodes
Elektronische Bauelemente
Surface Mount Switching Diodes
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
SOT-523
A
* Fast Switching Speed
* For General Purpose Switching Applications
C
* Ultra-Small Surface Mount Package
B C
TOP V IE W
* Also Available in Lead Free Version
* High Conductance
E
B
G
H
MECHANICAL DATA
K
* Case: SOT-523, Molded Plastic
N
M
* Case material: UL Flammability Rating 94V-0
* Moisture sensitvity: Leavel 1 per J-STD-020A
J
L
D
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
¾
¾
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
0.22
L
0.10
0.30
* Terminals: Solderable per MIL-STD-202,
Method 208
M
0.10
0.20
0.12
* Polarity: See Diagrams Below
N
0.45
0.65
0.50
a
0°
8°
¾
* Weight: 0.002 grams (approx.)
All Dimensions in mm
* Mounting Position: Any
Maximum Ratings @ TA = 25 C unless otherwise specified
O
Characteristic
Symbol
Value
Unit
VRRM
VRWM
VR
85
V
VR(RMS)
60
V
IFM
155
75
mA
Repetitive Peak Forward Current
IFRM
500
mA
Non-Repetitive Peak Forward Surge Current
IFSM
0.5
A
Pd
150
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 2)
Single diode
Double diode
Power Dissipation (Note 2)
RθJA
833
Tj , TSTG
-65 to +150
Thermal Resistance Junction to Ambient (Note 2)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
mW
o
C/W
o
C
@ TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)R
85
¾
V
IR = 100mA
Forward Voltage (Note 1)
VF
¾
0.715
0.855
1.0
1.25
V
IF = 1.0mA
IF = 10mA
IF = 50mA
IF = 150mA
Leakage Current (Note 1)
IR
¾
2.0
100
60
30
mA
mA
mA
nA
VR = 75V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 25V
Typical Total Capacitance
CT
¾
1.5
pF
VR = 0, f = 1.0MHz
Reverse Recovery Time
trr
¾
4.0
ns
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Reverse Breakdown Voltage (Note 1)
Notes :
Test Condition
1. Short duration test pulse to minimize self-heating effect.
2. Device mounted on FR-4 PC board with recommended pad layout.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individua
Page 1 of 2
BAS16T/BAW56T/BAV70T/BAV99T
Plastic-Encapsulate Diodes
Elektronische Bauelemente
Surface Mount Switching Diodes
Marking
BAS16T Marking: A2
BAW56T Marking: JD
Typical Characteristics
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, FORWARD CURRENT (mA)
250
200
Single diode loaded
150
100
Double diode loaded
50
0
50
100
BAV99T Marking: JE
BAS16T/BAW56T/BAV70T/BAV99T
300
0
BAV70T Marking: JJ
150
200
1
0.1
TA = 150ºC
TA = 75ºC
TA = 25ºC
TA = 0ºC
TA = -40ºC
0.01
0.001
1.0
0.5
0
1.5
10000
2.0
TA = 150ºC
f = 1.0MHz
1.8
TA = 125ºC
1000
100
CT, TOTAL CAPACITANCE (pF)
IR, INSTANTANEOUS REVERSE CURRENT (nA)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
TA = 75ºC
TA = 25ºC
10
TA = 0ºC
1
TA = -40ºC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0.0
20
0
40
60
80
100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance vs. Reverse Voltage
Any changing of specification will not be informed individua
Page 2 of 2