BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J A BC337-25 D BC337-40 REF. B Product-Rank BC338-16 BC338-25 BC338-40 A B C D E F G H J K K Range 100~250 160~400 250~630 E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector 1 2 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Total Device Dissipation Junction, Storage Temperature http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Symbol BC337 BC338 BC337 BC338 VCBO VCEO VEBO IC PD TJ, TSTG Ratings 50 30 45 25 5 800 625 150, -55~150 Unit V V V mA mW °C Any changes of specification will not be informed individually. Page 1 of 4 BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown BC337 Voltage BC338 Collector to Emitter Breakdown BC337 Voltage BC338 Emitter to Base Breakdown Voltage BC337 Collector Cut-Off Current BC338 BC337 Collector Cut-Off Current BC338 Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) VBE fT Cob Min. Typ. Max. 50 30 45 25 5 100 60 210 - 15 0.1 0.1 0.2 0.2 0.1 630 0.7 1.2 1.2 - Unit Test Conditions V IC=100µA, IE=0 V IC=10mA, IB=0 V IE=10µA, IC=0 VCB=45V, IE=0 µA VCB=25V, IE=0 VCE=40V, IB=0 µA VCE=20V, IB=0 µA VEB=4V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=300mA V IC=500mA, IB=50mA V IC=500mA, IB=50mA V VCE=1V, IC=300mA MHz VCE=5V, IC=10mA, f=100MHz pF VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 2 of 4 BC337 / BC338 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 BC337 / BC338 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4