BC857BV Dual PNP Plastic-Encapsulated Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-563 FEATURES Epitaxial Die Construction Complementary NPN Types Available (BC847BV) Ultra-Small Surface Mount Package A B MARKING J D K5V PACKAGE INFORMATION Millimeter Min. Max. 1.50 1.70 1.50 1.70 0.525 0.600 1.10 1.30 0.05 REF. REF. MPQ Leader Size SOT-563 3K 7 inch H F C Package G A B C D E E Millimeter Min. Max. 0.09 0.16 0.45 0.55 0.17 0.27 0.10 0.30 REF. F G H J MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V IC -100 mA Collector Current – Continuous Collector Power Dissipation Thermal Resistance. Junction to Ambient Air Junction & Storage temperature PC 0.15 W RθJA 833 °C / W TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector-Base Breakdown Voltage V(BR)CBO -50 - - V Collector-Emitter Breakdown Voltage V(BR)CEO -45 - - V IC= -10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - - V IE= -1µA, IC=0 ICBO - - -15 nA VCB= -30V, IE=0 Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Noise figure http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Test Conditions IC= -10µA, IE=0 hFE 220 - 475 VCE(sat)1 - - -0.1 V IC= -10mA, IB= -0.5mA VCE(sat)2 - - -0.4 V IC= -100mA, IB= -5mA VBE(sat)1 - -0.7 - V IC= -10mA, IB= -0.5mA VBE(sat)2 - -0.9 - V IC= -100mA, IB= -5mA VBE(1) -0.6 - -0.75 V VCE= -5V,IC= -2mA VBE(2) - - -0.82 V VCE= -5V,IC= -10mA fT 100 - - MHz Cob - - 4.5 pF VCB= -10V, IE=0, f=1MHz dB VCE= -5V, Ic= -0.2mA, f=1kHZ, Rs=2KΩ,BW=200Hz NF - - 10 VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA, f=100MHz Any changes of specification will not be informed individually. Page 1 of 2 BC857BV Elektronische Bauelemente Dual PNP Plastic-Encapsulated Transistors TYPICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2