SECOS BCPA94

BCPA94
-0.5 A, -400 V
PNP Silicon Epitaxial Planar Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The BCPA94 is designed for application requires high voltage.
SOT-89
FEATURES



High Voltage：VCEO=400V (min) at IC=1mA
High Current gain：IC=300mA at 25°C
Complementary with BCPA44
MARKING
A94

B
C
Date Code
E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction & Storage Temperature
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
-400
-400
-6
-0.5
1
150, -55~150
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter current
Emitter cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Symbol
Min.
Typ.
Max.
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
hFE1
hFE2
hFE3
hFE4
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)
-400
-400
-6
40
50
45
20
-
-
-100
-500
-100
300
-350
-500
-750
-750
V
V
V
nA
nA
nA
mV
mV
Test Conditions
IC= -100A, IE=0
IC= -1mA, IB=0
IE= -100A, IC=0
VCB= -400V, IE=0
VCE= -400V, VBE=0
VEB= -6V, IC=0
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
IC= -1mA, IB= -0.1mA
IC= -10mA, IB= -1mA
IC= -50mA, IB= -5mA
IC= -10mA, IB= -1mA
* Pulse Test: Pulse Width ≦ 380μs, Duty Cycle≦2%
http://www.SeCoSGmbH.com/
11-Jun-2010
Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2
BCPA94
Elektronische Bauelemente
-0.5 A, -400 V
PNP Silicon Epitaxial Planar Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
11-Jun-2010
Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2