C945T NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES Low noise Excellent hFE linearity Complementary to A733T TO-92 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current Continuous IC 150 mA Collector Power Dissipation PC 400 mW TJ, TSTG 125, -55~125 °C Junction, Storage Temperature 1 2 3 1 2 3 1. EMITTER 2. COLLECTOR 3. BASS ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified) Parameter Symbol Test Conditions Min Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 60 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 100μA, IB = 0 50 V Emitter-Base Breakdown Voltage V(BR)EBO IE = 100mA, IC = 0 5 V Collector Cut-off Current ICBO VCB = 60V, IE = 0 0.1 μA Collector Cut-off Current ICEO VCE = 45V 0.1 μA Emitter Cut-off Current IEBO VEB = 5V, IC = 0 0.1 μA hFE(1) VCE = 6V, IC = 1mA 70 hFE(2) VCE = 6V, IC = 0.1mA 40 Collector-Emitter Saturation Voltage VCE(sat) IC = 100mA, IB = 10mA 0.3 V Base-Emitter Saturation Voltage VBE(sat) IC = 100mA, IB = 10mA 1 V Cob VCB = 10V, IE = 0, f = 1MHz 3.0 pF fT VCE=6V, IC=10mA, f=30MHz DC Current Gain Collector Power Dissipation Transition Frequency Noise Figure VCE=6V, IC=0.1mA, NF Typ Max 700 200 MHz 10 RG=10 KΩ, f=kMHz Units dB CLASSIFICATION OF hFE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 Any changing of specification will not be informed individual 01-Jun-2005 Rev. B Page 1 of 2 C945T Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor TYPICAL CHARACTERISTICS http://www.SeCoSGmbH.com 01-Jun-2005 Rev. B Any changing of specification will not be informed individual Page 2 of 2