SECOS CZD1952

CZD1952
PNP High Speed
Elektronische Bauelemente
Switching Transistor
RoHS Compliant Product
TO-252
Description
The CZD1952 is designed for high speed switching applications.
Features
*
*
*
*
Wide SOA
Low Saturation Voltage,Typically VCE(sat)=-0.2V at IC/IB=-3A/-0.15A
High Speed Switching,Typically tf=-0.15us at IC=-3A
Complements to CZD5103
REF.
A
B
C
D
E
F
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
o
Absolute Maximum Ratings at TA=25 C (unless otherwise specified)
Parameter
Symbol
Ratings
Unit
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VE BO
Collect Current (DC)
IC
Collector to Base Voltage
IC
o
PD (TA =25 C )
o
PD (TC =25 C )
Tj, Tstg
Collect Current (Pulse)
Total Power Dissipation
Operating Junction and Storage Temperature Range
- 5.
V
-5
- 10
A
1
10
W
-55~+150
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)
A
W
C
o
O
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Voltage, On
DC Current Gain
DC Current Gain
Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
Symbol
BVCBO
BV CEO
BVEBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)1
*VBE(on)2
*hFE1
*hFE2
Cob
fT
ton
tstg
tf
Min.
-100
-60
-5
120
40
-
Typ. Max.
-
130
80
-
- 10
-10
-0.3
-0.5
-1.2
-1.5
320
0.3
1.5
0.3
Unit
V
V
V
uA
uA
V
V
V
V
pF
MHz
uS
Test Cond itions
IC=-50 uA, IE=0
IC= - 1mA, IB=0
IE= - 50uA, IC=0
VCE=-100V, V EB=0
VEB=-5V, IC=0
IC= -3A, IB= -0.15A
IC= -4A, IB= -0.2A
IC= -3A, IB= -0.15A
IC= -4A, IB= -0.2A
VCE=-2V, IC=-1A
VCE=-2V, IC= -3A
VCB=-10V,IE=0,f=1MHz
VCE=-10V, IE=0.5A,f=30MHz
IC=-3A,RL=10Ω
IB1=-IB2=-0.15A
VCC=-30V
*Measure using pulse current
http://www.SeCoSGmbH.com/
01-Feb-2008 Rev. B
Any changing of specification will not be informed individual
Page 1 of 2
CZD1952
Elektronische Bauelemente
PNP High Speed
Switching Transistor
Characteristics Curve
http://www.SeCoSGmbH.com/
01-Feb-2008 Rev. B
Any changing of specification will not be informed individual
Page 2 of 2