CZD2983 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD2983 is designed for power amplifier and driver stage amplifier applications. D-Pack (TO-252) FEATURES High transition frequency：fT = 100MHz (Typ.) Complements to CZD1225 A B C D GE K Collector MARKING 2983 1 2 M Date Code HF N O P J Base Emitter 3 REF. A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Total Device Dissipation (TA=25°C) Total Device Dissipation (TC=25°C) Junction Temperature Storage Temperature http://www.SeCoSGmbH.com/ 03-Sep-2010 Rev. A Symbol Ratings Unit VCBO VCEO VEBO IC IB 160 160 5 1.5 0.3 V V V A A PD 1 W PD 15 W TJ TSTG 150 -55 ~ 150 ℃ ℃ Any changes of specification will not be informed individually. Page 1 of 3 CZD2983 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Collector-base breakdown voltage BVCBO 160 - - V IC= 1mA, IE=0 Collector-emitter breakdown voltage BVCEO 160 - - V IC= 10mA, IB=0 Emitter-base breakdown voltage BVEBO 5 - - V IE= 1mA, IC=0 Collector cut-off current ICBO - - 1 A VCB= 160V, IE=0 Emitter cut-off current IEBO - - 1 A VEB= 5V, IC=0 Collector-emitter saturation voltage VCE(sat) * - - 1.5 V IC= 500mA, IB= 50mA Base-emitter saturation voltage VBE(on) * - - 1.0 V VCE= 5V, IC= 500mA hFE * 70 - 240 Transition frequency fT - 100 - MHz Output Capacitance COB - 25 - pF *DC current gain Typ. Max. Unit Test Conditions VCE= 5V, IC= 100mA VCE= 10V, IC= 100mA VCB=10V, IE=0, f=1MHz *Measured under pulse condition. Pulse width ≦ 300μs, Duty Cycle ≦ 2% CLASSIFICATION OF hFE Rank O Y Range 70 ~ 140 120 ~ 240 http://www.SeCoSGmbH.com/ 03-Sep-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 CZD2983 Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 03-Sep-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 3