MMBD1501A~ MMBD1505A Plastic-Encapsulated Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 A FEATURES L 3 3 High conductance Low Leakage Diode C B Top View 1 1 K 2 E 2 D F MARKING Part Name MMBD1501A MMBD1503A MMBD1504A MMBD1505A A11 A13 A14 A15 REF. Marking A B C D E F Circuit H G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (@ Ta = 25°C) PARAMETER Working Inverse Voltage SYMBOL LIMITS UNIT VR 200 V DC Forward Current IF 600 mA Average Rectifying Current IO 200 mA Total Device Dissipation Thermal Resistance, Junction to Ambient 1s Surge Current 1 microsecond Junction, Storage Temperature PD 350 mW RθJA 357 °C/W 1 A 2 A 150, -55~150 °C ISURGE TJ , TSTG ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise specified) Parameters Reverse Breakdown Voltage Reverse voltage leakage current Forward Voltage Diode Capacitance http://www.SeCoSGmbH.com/ 30-Nov-2010 Rev. B Symbol Min. Max. Unit V(BR) IR VF1 VF2 VF3 VF4 VF5 VF6 CD 200 - 10 0.75 0.85 0.95 1.1 1.3 1.5 4 V nA V V V V V V pF Test Conditions IR =5µA VR =180V IF = 1 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 0, f = 1 MHz Any changes of specification will not be informed individually. Page 1 of 2 MMBD1501A~ MMBD1505A Elektronische Bauelemente Plastic-Encapsulated Diode RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 30-Nov-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 2