SECOS MMBD4148

MMBD4148
Surface Mount Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
A
L
·
·
Fast Switching Speed
·
·
For General Purpose Switching Applications
Surface Mount Package Ideally Suited for
Automatic Insertion
3
1
High Conductance
Top View
B S
2
V
G
3
3
1
CATHODE
ANODE
C
1
2
H
D
J
K
MAXIMUM RATINGS
Rating
Symbol
Value
SOT-23
Unit
Dim
Min
Max
Reverse Voltage
VR
75
Vdc
Forward Current
IF
300
mAdc
A
2.800
3.040
IFM(surge)
500
mAdc
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
G
1.780
2.040
PD
325
mW
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
1.8
RqJA
556
°C/W
PD
300
mW
L
0.890
1.020
S
2.100
2.500
2.4
mW/°C
V
0.450
0.600
RqJA
417
°C/W
TJ, Tstg
– 55 to +150
°C
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
mW/°C
All Dimension in mm
DEVICE MARKING
MMBD4148 = 5D, KA2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)
75
—
Vdc
—
—
25
5.0
nAdc
mAdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
—
4.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
—
1.25
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
—
4.0
ns
0.062 in.
0.024 in. 99.5% alumina.
1. FR– 5 = 1.0
0.75
2. Alumina = 0.4
0.3
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2
MMBD4148
Surface Mount Switching Diode
Elektronische Bauelemente
820 Ω
+10 V
2.0 k
tr
0.1 µF
tp
IF
100 µH
IF
t
trr
10%
t
0.1 µF
90%
DUT
50 Ω Input
Sampling
Oscilloscopes
50 Ω Output
Pulse
Generator
IR(REC) = 1.0 mA
IR
VR
Output Pulse
(IF = IR = 10 mA; Measured
at IR(REC) = 1.0 mA)
Input Signal
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
100
TA = 150°C
TA = –40°C
TA = 125°C
1.0
IR , Reverse Current (µA)
I F, Forward Current (mA)
TA = 85°C
10
TA = 25°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
0.001
1.2
0
10
20
30
VF, Forward Voltage (V)
VR, Reverse Voltage (V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
40
50
CD , Diode Capacitance (pF)
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
VR, Reverse Voltage (V)
Figure 4. Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2