SECOS MMBD4448DW

MMBD4448DW
Surface Mount Switching Diode Array
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-363
FEATURES
·
·
·
Fast Switching Speed
o
.055(1.40)
.047(1.20)
Ultra-Small Surface Mount Package
High Conductance Power dissipation
8
o
0
.026TYP
(0.65TYP)
.021REF
(0.525)REF
MECHANICAL DATA
·
·
·
·
·
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
Case: SOT-363, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
4
Polarity: See Diagrams Below
.018(0.46)
.010(0.26)
5
Weight: 0.006 grams (approx.)
6
O
Mounting Position: Any
2
1
.014(0.35)
.006(0.15)
3
.006(0.15)
.003(0.08)
.087(2.20)
.079(2.00)
6
5
.004(0.10)
.000(0.00)
4
.043(1.10)
.035(0.90)
1
2
.039(1.00)
.035(0.90)
3
Dimensions in inches and (millimeters)
MMBD4448 DW Marking: KA3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
VRRM
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Io
I FM
250
mA
500
mA
625
°C/W
– 55 to +150
°C
Average Rectified out Current(Note 1)
Forward Continuous Current (Note 1)
Thermal Resistance Junction to Ambient Air (Note1)
R thJA
Storage Temperature Range
Tstg
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Symbol
Min
Max
Unit
V(BR)R
75
—
V
0.62
0.72
—
0.855
—
1.0
IF=150mA
—
1.25
VR=75V
—
2.5
uA
—
—
50
30
uA
uA
—
25
nA
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
IF=5.0mA
IF=10mA
VF
IF=50mA
Reverse Current (Note 2)
VR=75V, Tj=150 C
O
VR=25V, Tj=150OC
IR
VR=20V
V
Total Capacitance VR=0, f=1.0MHz
CT
—
4.0
pF
Reverse Recovery Time IF=IR=10mA, Irr=0.1XIR,RL=100 Ohms
t rr
—
4.0
nS
Note 2. Short duration test pulse used to minimize self-heating.
http://www.SeCoSGmbH.com
01-Jan-2006 Rev.B
Any changing of specification will not be informed individual
Page 1 of 2
MMBD4448DW
Surface Mount Switching Diode Array
1000
IR, INSTANTANEOUS REVERSE CURRENT (nA)
IF, INSTANTANEOUS FORWARD CURRENT (mA)
Elektronische Bauelemente
100
10
TA = -40ºC
TA = 0ºC
TA = 25ºC
1
TA = 75ºC
TA = 125ºC
10000
TA = 125ºC
1000
TA = 75ºC
100
TA = 25ºC
10
TA = 0ºC
1
TA = -40ºC
0.1
0.1
0
0.8
0.4
1.2
1.6
0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
20
60
40
80
100
VR, REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
3
250
f = 1MHz
Pd, POWER DISSIPATION (mW)
CT, TOTAL CAPACITANCE (pF)
2.5
2
1.5
1
0.5
0
0
20
10
40
30
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Total Capacitance vs. Reverse Voltage
200
150
100
50
0
0
100
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve, Total Package
trr, REVERSE RECOVERY TIME (nS)
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8
10
IF, FORWARD CURRENT (mA)
Fig. 5 Reverse Recovery Time vs Forward Current.
http://www.SeCoSGmbH.com
01-Jan-2006 Rev.B
Any changing of specification will not be informed individual
Page 2 of 2