MMBT4401 NPN Silicon Switching Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A COLLECTOR SOT-23 L 3 3 3 1 1 BASE Top View B S 2 1 2 V 2 G EMITTER C H D J K MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 60 Vdc Emitter – Base Voltage VEBO 6.0 Vdc IC 600 mAdc Symbol Max Unit PD 300 mW 1.8 mW/ oC Collector Current — Continuous Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm THE RMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C T hermal R es is tance, J unction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature RθJA 556 PD 300 mW 2.4 mW/ C RθJA 417 T J , Ts tg -55 to +150 o C/W o o C/W o C DEVICE MARKING MMBT4401 = 2X ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 40 — 60 — Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(B R)CBO Emitter – Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V (BR)EBO 6.0 — Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV — 0.1 Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX — 0.1 Vdc Vdc Vdc µAdc µAdc 1. FR±5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width =< 300 µs, Duty Cycle =< 2.0%. http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 5 MMBT4401 NPN Silicon Switching Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 20 40 80 100 40 — — — 300 — — — 0.4 0.75 0.75 — 0.95 1.2 250 — — 6.5 — 30 1.0 15 0.1 8.0 40 500 1.0 30 Unit ON CHARACTERISTICS(3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe MHz pF pF kΩ X 10– 4 — mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ((VCC = 30 Vdc,, VEB = 2.0 Vdc,, IC = 150 mAdc, IB1 = 15 mAdc) td — 15 tr — 20 ((VCC = 30 Vdc,, IC = 150 mAdc,, IB1 = IB2 = 15 mAdc) ts — 225 tf — 30 v 300 ms, Duty Cycle v 2.0%. ns ns SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% +16 V 0 – 2.0 V 200 Ω +16 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 200 Ω 0 1.0 kΩ < 2.0 ns CS* < 10 pF 1.0 kΩ –14 V < 20 ns CS* < 10 pF – 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Figure 2. Turn–Off Time Any changing of specification will not be informed individual Page 2 of 5 MMBT4401 NPN Silicon Switching Transistor Elektronische Bauelemente TRANSIENT CHARACTERISTICS 25°C 100°C 30 10 7.0 5.0 10 7.0 5.0 QT 2.0 1.0 0.7 0.5 0.3 0.2 Ccb 3.0 2.0 0.1 VCC = 30 V IC/IB = 10 3.0 Cobo Q, Charge (nC) Capacitance (pF) 20 QA 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 10 30 20 50 70 100 Reverse Voltage (V) IC, Collector Current (mA) Figure 3. Capacitances Figure 4. Charge Data IC/IB = 10 70 500 VCC = 30 V IC/IB = 10 70 tr 50 50 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 30 20 t, Time (ns) t, Time (ns) 300 100 100 30 tf 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 200 IC, Collector Current (mA) IC, Collector Current (mA) Figure 5. Turn–On Time Figure 6. Rise and Fall Times 300 300 500 100 ts′ = ts – 1/8 tf IB1 = IB2 IC/IB = 10 to 20 VCC = 30 V IB1 = IB2 70 50 tf', Fall Time (ns) 200 t s ', Storage Time (ns) 200 100 70 IC/IB = 20 30 20 IC/IB = 10 10 50 7.0 30 5.0 10 20 http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 30 50 70 100 200 300 500 10 20 30 50 70 100 IC, Collector Current (mA) IC, Collector Current (mA) Figure 7. Storage Time Figure 8. Fall Time 200 300 500 Any changing of specification will not be informed individual Page 3 of 5 MMBT4401 NPN Silicon Switching Transistor Elektronische Bauelemente SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 IC = 1.0 mA, RS = 150 Ω IC = 500 µA, RS = 200 Ω IC = 100 µA, RS = 2.0 kΩ IC = 50 µA, RS = 4.0 kΩ 8.0 f = 1.0 kHz RS = OPTIMUM RS = SOURCE RS = RESISTANCE 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) 10 6.0 4.0 IC = 50 µA IC = 100 µA IC = 500 µA IC = 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, Frequency (kHz) RS, Source Resistance (OHMS) Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 255C This group of graphs illustrates the relationship between selected from the MMBT4401 lines, and the same units were hfe and other ªhº parameters for this series of transistors. To used to develop the correspondingly numbered curves on obtain these curves, a high±gain and a low±gain unit were each graph. 300 hfe, Current Gain 200 100 MMBT4401 UNIT 1 MMBT4401 UNIT 2 70 50 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 hje, Input Impedance (OHMS) 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 Figure 11. Current Gain Figure 12. Input Impedance 5.0 7.0 10 100 MMBT4401 UNIT 1 MMBT4401 UNIT 2 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 hoe, Output Admittance (µ mhos) hre, Voltage Feedback Ratio (X 10-4) 0.2 IC, Collector Current (mA) 10 50 20 10 MMBT4401 UNIT 1 MMBT4401 UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, Collector Current (mA) IC, Collector Current (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 0.1 IC, Collector Current (mA) 7.0 5.0 0.2 0.1 MMBT4401 UNIT 1 MMBT4401 UNIT 2 5.0 7.0 10 Any changing of specification will not be informed individual Page 4 of 5 MMBT4401 NPN Silicon Switching Transistor Elektronische Bauelemente STATIC CHARACTERISTICS 3.0 VCE = 1.0 V VCE = 10 V hFE, Normalized Current Gain 2.0 TJ = 125°C 1.0 25°C 0.7 0.5 – 55°C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 5.0 3.0 7.0 10 20 30 50 70 200 100 300 500 IC, Collector Current (mA) Figure 15. DC Current Gain Vce, Collector-Emitter Voltage (V) 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, Base Current (mA) Figure 16. Collector Saturation Region 1.0 + 0.5 TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0.5 http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 1.0 2.0 5.0 – 0.5 – 1.0 – 1.5 qVB for VBE – 2.0 0 0.1 0.2 qVC for VCE(sat) 0 Coefficient (mV/ ° C) Voltage (V) 0.8 10 20 50 100 200 500 – 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, Collector Current (mA) IC, Collector Current (mA) Figure 17. “On” Voltages Figure 18. Temperature Coefficients 500 Any changing of specification will not be informed individual Page 5 of 5