MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is recommended. 1. Base • This transistor is also available in the TO-92 case with the type designation MPSA06. A Mechanical Data 2. Emitter L 3 B S Top View Case: SOT-23 Plastic Package 2 1 Weight: approx. 0.008g G V Marking Code: 1GM C H D Maximum Ratings and Thermal Characteristics Parameter Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm J K Dim (TA = 25°C unless otherwise noted) Symbol Value Unit Collector Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 4.0 V IC 500 mA Collector Current (1) Power Dissipation at TA = 25°C Ptot 277 300(2) mW Thermal Resistance Junction to Ambiant Air RθJA 450 (1) °C/W Junction Temperature Tj 150 °C Storage Temperature Range TS –65 to +150 °C Notes: Device on alumina substrate. Electrical Characteristics (T = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 80 — — V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 80 — — V Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4.0 — — V Collector-Emitter Cutoff Current ICES VCE = 60V, IB = 0 — — 100 nA Collector-Base Cutoff Current ICBO VCB = 80V, IE = 0 — — 100 nA Collector Saturation Voltage VCEsat IC = 100mA, IB = 10mA — — 0.25 V Base-Emitter On Voltage VBE(on) IC = 100mA, VCE = 1V — — 1.2 V hFE VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA 100 100 — — — — — — fT VCE = 2V, IC = 10mA f = 100MHz 100 — — MHz J DC Current Gain Gain-Bandwidth Product http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 2 MMBTA06 Elektroni sche Bauelemente http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Plastic -Encapsulate Transistor Any changing of specification will not be informed individual Page 2 of 2