MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 A Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 L COLLECTOR 3 3 3 B S BASE 1 1 1 2 V 2 G EMITTER 2 FEATURES C H K D Power dissipation PCM : 0.3W（Tamb=25℃） Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol J All Dimension in mm unless Test otherwise specified） conditions MIN MAX UNIT 30 V Ic= 100uA， IB=0 30 V IE= 100μA， Ic=0 10 V Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO IE=0 Collector cut-off current ICBO VCB=30 V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 10V , 0.1 μA IC=100 mA, IB=0.1mA 1.5 V VCE=5V,IC= 100mA 2.0 V hFE(1) * DC current gain hFE(2) * Collector-emitter saturation voltage VCE (sat) * Base-emitter voltage VBE * Transition frequency fT IC=0 VCE=5V, IC= 10mA VCE=5V, IC= 100mA VCE=5V, IC= 10mA f=100MHz MMBTA13 5000 MMBTA14 10000 MMBTA13 10000 MMBTA14 20000 125 MHz * Pulse Test : pulse width≤300μs，duty cycle≤2%。 Marking : MMBTA13:K2D；MMBTA14：K3D http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 1 of 3 MMBTA13 MMBTA14 Elektronische Bauelemente 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 Darlington Amplifier Transistor NPN Silicon 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 µA 70 50 100 µA 30 20 10 1.0 mA 1.0 2.0 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.3 10 µA 8.0 100 µA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 0 1.0 Figure 3. Total Wideband Noise Voltage 1.0 0.7 0.5 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (kΩ) 500 1000 Figure 4. Wideband Noise Figure D = 0.5 0.2 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZθJC(t) = r(t) • RθJCTJ(pk) - TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJATJ(pk) - TA = P(pk) ZθJA(t) 0.02 0.01 0.1 50k 100k Figure 2. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 1. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 5. Thermal Response http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B Any changing of specification will not be informed individual Page 2 of 3 MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25°C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125°C 100k 70k 50k 25°C 30k 20k 10k 7.0k 5.0k -55°C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 10. “On” Voltages http://www.SeCoSGmbH.com 01-Jun-2004 Rev. B 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25°C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (µA) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25°C 500 -1.0 -2.0 *APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C *RVC FOR VCE(sat) -55°C TO 25°C -3.0 25°C TO 125°C -4.0 VB FOR VBE -5.0 -55°C TO 25°C -6.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 11. Temperature Coefficients Any changing of specification will not be informed individual Page 3 of 3