MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 * Features .055(1.40) .047(1.20) 8 o 0 .021REF (0.525)REF Power dissipation O Collector current : 0.6 A C1 B2 .018(0.46) .010(0.26) E2 .014(0.35) .006(0.15) Collector-base voltage .006(0.15) .003(0.08) .087(2.20) .079(2.00) V(BR)CBO : 75 V E1 Operating & Storage junction Temperature Tj, Tstg : -55 C~ +150 C O .053(1.35) .045(1.15) .096(2.45) .085(2.15) PCM : 0.15 W (Tamp.= 25 C) ICM o .026TYP (0.65TYP) B1 .004(0.10) .000(0.00) .043(1.10) .035(0.90) C2 .039(1.00) .035(0.90) O Marking: K1P Dimensions in inches and (millimeters) Electrical Characteristics( Tamb=25 C unless otherwise specified) O Parameter Symbol Test conditions MIN MAX UNIT 75 V Ic= 10mA， IB=0 40 V V(BR)EBO IE=10μA， IC=0 6 V Collector cut-off current ICBO VCB=60 V , IE=0 0. 01 μA Emitter cut-off current IEBO VEB= 3V , 0. 01 μA hFE(1) VCE=10V, IC= 0.1mA 35 hFE(2) VCE=10V, IC= 1mA 50 hFE(3) VCE=10V, IC= 10mA 75 hFE(4) VCE=10V, IC= 150mA 100 hFE(5) VCE=10V, IC= 500mA 40 hFE(6) VCE=1V, 35 Collector-base breakdown voltage V(BR)CBO Ic= 10μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IE=0 IC=0 IC= 150mA VCE(sat)1 IC=150 mA, IB= 15mA 0.3 V VCE(sat)2 IC=500 mA, IB= 50mA 1 V VBE(sat)1 IC=150 mA, IB=15mA 1.2 V VBE(sat)2 IC=500 mA, IB= 50mA 2 V fT Transition frequency Output Capacitance Cob Input Capacitance Cib Noise Figure NF VCE=20V, IC= 20mA f=100MHz VCB=10V, IE= 0 f=1MHz VEB=0.5V, IC= 0 f=1MHz VCE=10V, IC=100μA f=1KHz,Rs=1KΩ Delay time td VCC=30V, IC=150mA Rise time tr VBE(off)=0.5V,IB1=15mA Storage time tS VCC=30V, IC=150mA Fall time tf http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 300 IB1= IB2= 15mA 0.6 300 MHz 8 pF 25 pF 4 dB 10 nS 25 nS 225 nS 60 nS Any changing of specification will not be informed individual Page 1 of 4 MMDT2222A NPN Silicon Multi-chip Transistor Elektronische Bauelemente SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 µs, Duty Cycle ≈ 2.0% +16 V 0 –2 V 200 1.0 to 100 µs, Duty Cycle ≈ 2.0% +16 V 200 0 1 kΩ CS* < 10 pF < 2 ns 1k –14 V < 20 ns CS* < 10 pF 1N914 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 hFE , DC Current Gain 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 200 5.0 10 300 500 700 1.0 k Figure 3. DC Current Gain VCE , Collector–Emitter Voltage (V) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 I B, Base Current (mA) 2.0 3.0 20 30 50 Figure 4. Collector Saturation Region http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B Any changing of specification will not be informed individual Page 2 of 4 MMDT2222A NPN Silicon Multi-Chip Transistor Elektronische Bauelemente 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts – 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 20 30 50 70 100 I C, Collector Current (mA) 200 300 500 5.0 7.0 10 20 Figure 5. Turn – On Time IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 300 500 6.0 f = 1.0 kHz 8.0 NF, Noise Figure (dB) NF, Noise Figure (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 2.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 50 50 100 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, Frequency (kHz) RS, Source Resistance (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 30 f T, Current–Gain Bandwidth Products (MHz) 500 20 Ceb Capacitance (pF) 200 10 8.0 10 7.0 5.0 Ccb 3.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 Reverse Voltage (V) Figure 9. Capacitances http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 30 50 70 100 I C, Collector Current (mA) Figure 6. Turn – Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, Time (ns) t, Time (ns) 100 70 50 20 30 50 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 IC, Collector Current (mA) 30 50 70 100 Figure 10. Current–Gain Bandwidth Product Any changing of specification will not be informed individual Page 3 of 4 MMDT2222A NPN Silicon Malti-Chip Transistor Elektronische Bauelemente 1.0 +0.5 TJ = 25°C 0 0.8 Coefficient (mV/ °C) V, Voltage (V) VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) – 0.5 – 1.0 – 1.5 RqVB for VBE – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 I C, Collect Current (mA) Figure 11. “On” Voltages http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C, Collect Current (mA) 500 Figure 12. Temperature Coefficients Any changing of specification will not be informed individual Page 4 of 4