MMDT4944 NPN+NPN Dual-Chip Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-353 FEATURES z Small package (dual type) z High voltage and high current z High hFE, Excellent hFE linearity A E B PACKAGING INFORMATION Weight: 0.0081g (approximate) MARKING CODE LY 1 L 5 4 2 D G J Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 A B C D E F Q2 1 H REF. LGR Q1 F 3 K C REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified) SYMBOL RATINGS UNIT Collector to Base Voltage PARAMETER VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 0.15 A Collector Power Dissipation Pc 0.20 W TJ, TSTG +150, -55 ~ +150 ℃ Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT - - V Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 V(BR)CBO 60 Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0 V(BR)CEO 50 - - V Emitter-Base Breakdown Voltage IE = 100 μA, IC = 0 V(BR)EBO 5 - - V Collector Cutoff Current VCB = 60 V, IE = 0 ICBO - - Emitter Cutoff Current VEB = 5 V, IC = 0 IEBO - Collector-Emitter Saturation Voltage IC = 100 mA, IB = 10 mA VCE(sat) - hFE fT COB DC Current Transfer Ratio VCE = 6V, IC = 2 mA Transition Frequency VCE = 10 V, IC = 1 mA Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 0.1 μA 0.1 μA - 0.25 V 120 - 400 80 - - MHz - - 3.5 pF CLASSIFICATION OF hFE Marking Rank Range http://www.SeCoSGmbH.com/ 01-June-2005 Rev. A LY LGR Y GR 120 - 240 200 – 400 Any changes of specification will not be informed individually. Page 1 of 2 MMDT4944 Elektronische Bauelemente NPN+NPN Dual-Chip Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-June-2005 Rev. A Any changes of specification will not be informed individually. Page 2 of 2