MMDT5401 Plastic-Encapsulate Multi-Chip (PNP+PNP) Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055(1.40) .047(1.20) Features .021REF (0.525)REF * Epitaxial Planar Die Construction * Complementary NPN Type Available (MMDT5551) C2 B1 o 8 o 0 .026TYP (0.65TYP) .053(1.35) .045(1.15) .096(2.45) .085(2.15) .018(0.46) .010(0.26) E1 .014(0.35) .006(0.15) .006(0.15) .003(0.08) .087(2.20) .079(2.00) E2 B2 .004(0.10) .000(0.00) C1 .043(1.10) .035(0.90) .039(1.00) .035(0.90) Marking : K4M Dimensions in inches and (millimeters) Absolute Maximum Ratings (Tamb=25 C unless other wise specified) o Parameter Symbol Ratings Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -0.2 A Collector Dissipation PC 0.2 Operating Junction and Storage Temperature Range Tj, Tstg W o C -55~+150 ELECTRICAL CHARACTERISTICS (Tamb=25oC unless other wise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100µA, I E=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 V Collector cut-off current ICBO VCB=-120 V , IE=0 -0.05 µA Emitter cut-off current IEBO VEB=-3V , IC=0 -0.05 µA hFE(1) VCE=-5 V, IC= -1mA 50 hFE(2) VCE=-5 V, IC= -10mA 60 hFE(3) VCE=-5 V, IC= -50mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V VBE(sat)1 IC= -10 mA, IB=-1mA -1 V VBE(sat)2 IC= -50 mA, IB=-5mA -1 V 300 MHz 6 pF 8.0 dB Transition frequency fT VCE= -10V, IC= -10mA, f = 100MHz Output Capacitance Cob VCB=-10V, IE= 0 , f=1MHz Noise Figure NF VCE= -5.0V, IC= -200µA, RS= 10 Ω,f = 1.0kHz http://www.SeCoSGmbH.com 01-Jan-2006 Rev.B 240 100 Any changing of specification will not be informed individual Page 1 of 2 MMDT5401 Elektronische Bauelemente Typical Characteristics http://www.SeCoSGmbH.com 01-Jan-2006 Rev.B Plastic-Encapsulate Multi-Chip (PNP+PNP) Transistor MMDT5401 Any changing of specification will not be informed individual Page 2 of 2