MPS2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 COLLECTOR 3 2 BASE ƔFEATURES . Epitaxial Planar Die Construction . Complementary NPN Type Available 1 1 EMITTER 2 3 (MPS2222A) . Ideal for Medium Power Amplification and Switching ƔMAXIMUM RATINGS RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25 к Derate Above 25 к Total Device Dissipation @ TC = 25 к Derate Above 25 к Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC TJ, TSTG VALUE -60 -60 -5.0 -600 625 5.0 1.5 12 -55 ~ +150 UNIT V V V mA mW mW / к Watts mW / к к SYMBOL RșJA RșJC MAX. 200 83.3 UNIT к/W к/W PD PD ƔTHERMAL CHARACTERISTICS CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ƔELECTRICAL CHARACTERISTICS (T A CHARACTERISTIC = 25 к unless otherwise noted) SYMBOL Min. Max. UNIT V(BR)CEO -40 - V V(BR)CBO -60 - V V(BR)EBO -5.0 - V ICEX - -50 nA ICBO - -0.10 -15 µA IEBO - -100 nA ICEO - -100 nA IBEX - -50 nA OFF CHARACTERISTICS (1) Collector - Emitter Breakdown Voltage (IC = -10 mA, IB = 0) Collector - Base Breakdown Voltage (IC = -10 µA, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 µA, IC = 0) Collector Cut-off Current (VCE = -50 V, VEB(oFF) = -0.5 V) Collector Cut-off Current (VCB = -50 V, IE = 0) (VCB = -50 V, IE = 0, TA = 150 к) Emitter Cut-off Current (VEB = -3.0 V, IC = 0) Collector Cut-off Current (VCE = -35 V) Base Cut-off Current (VCE = -30 V, VEB(oFF) = -0.5 V) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 5 MPS2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor ƔELECTRICAL CHARACTERISTICS (T A = 25 к unless otherwise noted) (Continued) CHARACTERISTIC SYMBOL Min. Max. UNIT 75 50 100 100 50 300 - VCE(sat) - -0.3 -1.0 V VBE(sat) - -1.3 -2.0 V fT 200 - MHz Cobo - 8.0 pF Cibo - 30 pF ton td tr toff ts tf - 50 10 40 110 80 30 ns ns ns ns ns ns ON CHARACTERISTICS DC Current Gain (IC = -0.1 mA, VCE = -10 V) (IC = -1.0 mA, VCE = -10 V) (IC = -10 mA, VCE = -10 V) (1) (IC = -150 mA, VCE = -10 V) (1) (IC = -500 mA, VCE = -10 V) (1) Collector - Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) (IC = -500 mA, IB = -50 mA) (1) Base - Emitter Saturation Voltage (IC = -150 mA, IB = -15 mA) (IC = -500 mA, IB = -50 mA) hFE - SMALL - SIGNAL CHARACTERISTICS (1) (2) Current - Gain - Bandwidth Product (IC = -50 mA, VCE = -20 V, f = 100 MHz) Output Capacitance (VCB = -10 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -2.0 V, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn-On Time (VCC = -30 V, IC = -150 mA, Delay Time IB1 = -15 mA) (Figure 1 and 5) Rise Time Turn-Off Time (VCC = -6.0 V, IC = -150 mA, Storage Time IB1 = IB2 = -15 mA) (Figure 2) Fall Time 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0 %. 2. fT is defined as the frequency at which | hfe | extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 50 -16 V TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 200 ns Figure 1. Delay and Rise Time Test Circuit http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns Figure 2. Storage and Fall Time Test Circuit Any changing of specification will not be informed individual Page 2 of 5 MPS2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor ƔTYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125°C 25°C 1.0 -ā55°C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 30 20 10 300 VCC = -30 V IC/IB = 10 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 td @ VBE(off) = 0 V 7.0 5.0 3.0 -5.0 -7.0 -10 Figure 5. Turn–On Time http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A tf 100 70 50 t′s = ts - 1/8 tf 30 20 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn–Off Time Any changing of specification will not be informed individual Page 3 of 5 MPS2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 Ω -500 µA, Rs = 560 Ω -50 µA, Rs = 2.7 kΩ -100 µA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = -50 µA -100 µA -500 µA -1.0 mA 4.0 0 100 30 Ceb 10 7.0 Ccb 5.0 3.0 2.0 -0.1 6.0 2.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 f T, CURRENT-GAIN Ċ BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product +0.5 -1.0 TJ = 25°C 0 V, VOLTAGE (VOLTS) COEFFICIENT (mV/ ° C) VBE(sat) @ IC/IB = 10 -0.8 VBE(on) @ VCE = -10 V -0.6 -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -1.0 -1.5 RqVB for VBE -50 -100 -200 -500 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A -0.5 -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 RqVC for VCE(sat) Any changing of specification will not be informed individual Page 4 of 5 MPS2907A Elektronische Bauelemente PNP Silicon General Purpose Transistor ƔTO-92 PACKAGE OUTLINE DIMENSIONS Symbol A A1 b c D D1 E e e1 L Ö http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 Any changing of specification will not be informed individual Page 5 of 5