MPSA06 NPN Elektronische Bauelemente Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES TO-92 4.55±0.2 *Low current (max. 500 mA) 4.5±0.2 *Low voltage (max. 80 V). 3.5±0.2 (1.27 Typ.) APPLICATIONS 1.25±0.2 14.3±0.2 *General purpose switching and amplification. 1 2 3 1: Emitter 2: Base 3: Collector 2.54±0.1 DESCRIPTION NPN transistor in a TO-92; plastic package. PNP complement: MPSA56. –0.07 0.43+0.08 0.46±0.1 Parameter Symbol Value Units PCM Power Dissipation 0.625 W I CM Collector Current 0.5 A Collector-Base Voltage 80 V(BR)CBO V Tstg Storage Temperature -55~+150 O TJ Junction Temperature 150 O ELECTRICAL CHARACTERISTICS (Tamb=25 C o Parameter unless Symbol otherwise Test C C specified) conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA , IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 4 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICEO VCE=60V, IB=0 0.1 µA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 µA DC current gain HFE(1) VCE=1V, IC= 100mA Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB=10mA 1.2 V fT VCE= 2 V, IC= 10mA f = 100MHz Transition frequency http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 100 100 200 MHz Any changing of specification will not be informed individual Page 1 of 3 MPSA06 Elektronische Bauelemente NPN Plastic-Encapsulate Transistor Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 MPSA06 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A NPN Plastic-Encapsulate Transistor Any changing of specification will not be informed individual Page 3 of 3