PZT13003 1.5A , 700V NPN Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-223 FEATURES For AF driver and output stages Power switching applications A M CLASSIFICATION OF hFE 4 Product-Rank PZT13003-A PZT13003-B PZT13003-C Range 8~20 15~30 25~40 Top View CB 1 2 K 3 L E D PACKAGE INFORMATION Package MPQ Leader Size SOT-223 2.5K 13 inch F G REF. A B C D E F H Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 J Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 REF. G H J K L M ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Symbol Ratings Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current -Continuous IC 1.5 A Collector Power Dissipation PD 1.25 W TJ, TSTG 150, -55~150 °C Parameter Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Min. Collector-base breakdown voltage Parameter V(BR)CBO 700 Max. Unit Collector-emitter breakdown voltage V(BR)CEO 450 V IC=10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 9 V IE=1mA, IC=0 V Test Conditions IC=1mA , IE=0 Collector cut-off current ICBO 0.1 mA VCB=700V, IE=0 Emitter-Base Cutoff Current IEBO 0.05 mA VEB=9V, IC=0 DC current gain hFE 8 40 Collector-emitter saturation voltage1 VCE(sat) 1 Base-emitter voltage VBE(on) T(on) tS ON-Time Storage time Fall time tf Transition frequency fT http://www.SeCoSGmbH.com/ 19-Jan-2012 Rev. A IC=1A, IB=250mA 1.2 V IC=1A, IB=250mA 1 μS 4 μS 0.7 4 VCE=10V, IC=0.5A V VCE=10V, IC=2A IB1=IB2=400mA μS MHz VCE=10V, IC=500mA, f=1.0MHZ Any changes of specification will not be informed individually. Page 1 of 2 PZT13003 Elektronische Bauelemente 1.5A , 700V NPN Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 19-Jan-2012 Rev. A Any changes of specification will not be informed individually. Page 2 of 2