S9012T PNP Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 4.5±0.2 FEATURE 3.5 ±0.2 14.3 ±0.2 Power dissipation PCM : 0.625 W Tamb=25 Collector current ICM: -0.5 A V(BR)CBO : -40 0.43 +0.08 –0.07 0.46 +0.1 –0.1 Collector-base voltage V (1.27 Typ.) Operating and storage junction temperature range Tj, Tstg: -55 +0.2 1.25–0.2 1 2 3 to +150 1: Emitter 2: Base 3: Collector 2.54 ±0.1 ELECTRICAL CHARACTERISTICS˄Tamb=25ć Symbol Parameter unless Test otherwise specified˅ conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100A ˈ IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100Aˈ IC=0 -5 V IB=0 Collector cut-off current ICBO VCB=- 40V , IE=0 -0.1 A Collector cut-off current ICBO VCB=-20V , IE=0 -0.1 A Emitter cut-off current IEBO VEB=- 5V, IC=0 -0.1 A hFE(1) VCE=-1V, IC=-50mA 64 hFE(2) VCE=-1V, IC= -500mA 40 300 DC current gain Collector-emitter saturation voltage VCE(sat) IC= -500 mA, IB= -50mA -0.6 V Base-emitter voltage VBE(sat) IC= -500 mA, IB=- 50mA -1.2 V Transition frequency fT VCE=-6V,IC=-20mA, 150 f=30MHz MHz CLASSIFICATION OF hFE(1) Rank D E F G H I Range 64-91 78-112 96-135 112-166 144-202 190-300 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 S9012T PNP Epitaxial Silicon Transistor Elektronische Bauelemente Typical Characteristics -50 1000 IB=-300μA VCE = -1V -40 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-250μA IB=-200μA -30 IB=-150μA IB=-100μA -20 IB=-50μA -10 10 -10 -0 -0 -10 -20 -30 -40 100 -50 Figure 2. DC current Gain -1000 VBE(sat) -100 VCE(sat) IC=10IB -1000 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Characteristic -100 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -10 -10 -100 1000 VCE=-6V 100 10 1 -1 -10 -100 -1000 -10000 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 2