S9014T NPN Silicon Pre-Amplifier, Low Level & Low Noise Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 3.5 ±0.2 4.5±0.2 4.55±0.2 Power dissipation PCM : 0.4 W ICM : 14.3 ±0.2 Collector current 0.1 A Collector-base voltage V(BR)CBO : 50 V 0.43 +0.08 –0.07 0.46 +0.1 –0.1 Operating & storage junction temperature (1.27 Typ.) O O Tj, Tstg : - 55 C ~ + 150 C +0.2 1.25–0.2 1 2 3 1: Emitter 2: Base 3: Collector 2.54 ±0.1 ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) O Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO Ic= 100μA， Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT 50 V Ic= 0.1mA， IB=0 45 V V(BR)EBO IE=100μA， IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 μA Collector cut-off current ICEO VCE=35V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 μA hFE DC current gain VCE=5V, IE=0 IC= 1mA 60 1000 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, IB= 5mA 1 V fT Transition frequency CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A VCE=5V, f=30MHz IC= 10mA 150 MHz hFE(1) A B C D 60-150 100-300 200-600 400-1000 Any changing of specification will not be informed individual Page 1 of 2 S9014T NPN Silicon Low Frequency, Low Noise Amplifier Elektronische Bauelemente Typical Characteristics 100 1000 VCE = 5V IB = 160µA IB = 140µA IB = 120µA 80 70 hFE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT 90 IB = 100µA 60 IB = 80µA 50 IB = 60µA 40 IB = 40µA 30 20 IB = 20µA 100 10 0 10 0 10 20 30 40 50 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE VBE (sat) 100 VCE (sat) IC = 20 IB 10 100 IC [mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VBE(sat), V CE(sat)[mV], SATURATION VOLTAGE Figure 2. DC current Gain 1000 10 1000 IC [mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 100 1000 VCE = 5V 100 10 1 10 100 1000 IC [mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 2