SCS202NF 80 V, 300 mA Plastic-Encapsulated, Dual Series Chips Small Signal Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Ultra high speed switching High reliability Suitable for high packaging density layout Fast reverse recovery time : trr = 1.5ns (typ.) Construction: silicon epitaxial planar z z z z z SOT-323 A L 3 3 C B Top View 1 1 K PACKAGING INFORMATION Four types of packaging are available Weight: 0.0078 g (Approx.) z z 2 E D F G A B C D E MARKING CODE , A3 H Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 REF. N 2 J REF. F G H J Millimeter Min. Max. 0.20 0.40 0.525 REF. 0.08 0.15 ABSOLUTE MAXIMUM RATINGS (each diode) Parameter Symbol Ratings Unit Peak Reverse Voltage VRM 80 V DC Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 100 mA Surge Current 1μS Total Power Dissipation Junction, Storage Temperature ISURGE 4 A PD 200 mW TJ, TSTG +150, -55 ~ +150 °C ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)(each diode) Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward Voltage VF - - 1.2 V IF = 100 mA Reverse Voltage Leakage Current IR - - 0.1 μA VR = 70V Diode Capacitance CT - - 3.5 pF VR = 6 V, f = 1 MHz Reverse Recovery Time TRR - - 4.0 nS VR = 6 V, IF = 5 mA Notes: 1. FR–5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. 01-April-2009 Rev. B Page 1 of 2 SCS202NF 80 V, 300 mA Plastic-Encapsulated, Dual Series Chips Small Signal Switching Diode Elektronische Bauelemente CHARACTERISTIC CURVES 10 125 REVERSE RECOVERY TIME : trr (ns) 100 75 50 25 0 0 25 50 75 100 125 9 VR=6V 8 7 6 5 4 3 2 1 0 0 150 1 2 AMBIENT TEMPERATURE :Ta (ºC) 50 Ta=100°C REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF (mA) 1000 10 5 Ta=85ºC 50ºC 25ºC 2 1 0ºC 30ºC 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 FORWARD VOLTAGE : VF 75°C 100 50°C 10 25°C 1 0°C 25°C 0.1 0.01 0 1.6 1.4 4 5 6 7 8 9 10 (mA) Fig.2 Reverse recovery time Fig.1 Power attenuation curve 20 3 FORWARD CURRENT : IF 10 (V) 20 30 40 50 60 70 80 CAPACITANCE BETWEEN TERMINALS : CT (pF) POWER DISSIPATION : Pd / Pd Max.(%) SCS202NF Fig.4 Reverse characteristics 0.01μF 0 0 2 4 6 8 10 12 14 16 18 20 Fig.5 Capacitance between terminals characteristics D.U.T. 5 PULSE GENERATOR OUTPUT 50 2 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.3 Forward characteristics f=1MHz 4 50 SAMPLING OSCILLOSCOPE INPUT 100ns OUTPUT trr 0.1IR IR 0 Fig.6 Reverse recovery time (trr) measurement circuit 01-April-2009 Rev. B Page 2 of 2