SCS222DSTL 0.1A , 80V Plastic-Encapsulated Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION WBFBP-03D Epitaxial planar Silicon diode D L C FEATURES E High speed. (TRR=1.5ns Typ.) Suitable for high packing density layout High reliability. D H B F APPLICATIONS Ultra high speed switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) K A Millimeter Min. Max. 0.950 1.050 0.950 1.050 0.010 0.070 0.210 0.310 0.350 REF. 0.680 REF. REF. A B C D E F MARKING N G J PACKAGE INFORMATION Millimeter Min. Max. 0.050 0.510 0.610 0.250 0.350 0.050 0.450 0.550 REF. G H J K L TOP VIEW Package MPQ Leader Size WBFBP-03D 5K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameters Symbol Rating Unit Peak Repetitive Reverse Voltage VRM 80 V DC Reverse Voltage VR 80 V Forward Continuous Current IFM 300 mA Average Rectified Output Current IO 100 mA PD 100 mW TJ,TSTG 150, -65~150 °C Power Dissipation Operating Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameters Symbol Min. Max. Unit V(BR) 80 - V IR=100µA Maximum DC Reverse Current at rated DC blocking voltage IR - 0.1 µA VR=70V Forward Voltage VF - 1.2 V IF=100mA Diode Capacitance CD - 3.5 pF VR=6V, f=1MHz Maximum Reverse Recovery Time TRR - 4 nS VR=6V, IF=5mA Reverse breakdown voltage http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Test Conditions Any changes of specification will not be informed individually. Page 1 of 2 SCS222DSTL Elektronische Bauelemente 0.1A , 80V Plastic-Encapsulated Switching Diode CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2