SCS751DS 30 mA, 40 V Plastic-Encapsulate Schottky Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION Silicon epitaxial planar DFNWB FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability APPLICATION Millimeter Min. Max. 0.55 0.65 0.95 1.050.4 0.5 0 0.05 REF. High speed switching For Detection A B C D For portable equipment: (i.e. Mobile phone, MP3, MD, CD-ROM, Millimeter Min. Max. 0.15 0.35 0.05REF 0.4 0.6 0.65TYP REF. E F G H DVD-ROM, Note book PC, etc) MARKING : Cathode - 5 +Anode MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at TA = 25°C PARAMETER SYMBOL RATINGS UNIT Peak Reverse Voltage VRM 40 V DC Reverse Voltage VR 30 V Mean Rectifying Current Peak Forward Surge Current Junction, Storage Temperature Io 30 mA IFSM 150 mA TJ, TSTG +125, -40 ~ +125 °C ELECTRICAL RATING at TA = 25°C PARAMETERS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Forward Voltage VF 0.37 V IF = 1mA Reverse Current IR 0.5 µA VR = 30V Capacitance between terminals CT pF VR = 30V, f = 1MHZ http://www.SeCoSGmbH.com/ 10-Nov-2009 Rev. A 2 Any changes of specification will not be informed individually. Page 1 of 2 SCS751DS Elektronische Bauelemente 30 mA, 40 V Plastic-Encapsulate Schottky Diodes RATINGS AND CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 10-Nov-2009 Rev. A Any changes of specification will not be informed individually. Page 2 of 2