SID3310
-10A, -20V,RDS(ON)150mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
Description
TO-251
The SID3310 provide the designer with the best combination of
fast switching, ruggerized device device design, low on-resistance
2.3±0.1
6.6±0.2
5.3±0.2
and cost -effectiveness.
0.5±0.05
The TO-251 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
7.0±0.2
5.6±0.2
1.2±0.3
0.75±0.15
Features
7.0±0.2
* 2.5V Gate Drive Capability
* Simple Drive Requirement
0.6±0.1
0.5±0.1
2.3REF.
G
D
D
S
Dimensions in millimeters
G
S
Absolute Maximum Ratings
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±12
V
-10
A
-6.2
A
-24
A
25
W
0.01
W/ C
Parameter
o
Continuous Drain Current,VGS@10V
ID@TC=25 C
Continuous Drain Current,VGS@10V
o
Pulsed Drain Current
ID@TC= 100 C
1
IDM
o
Total Power Dissipation
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Symbol
Ratings
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient
Max.
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01-Jun-2002 Rev. A
Rthj-c
Rthj-a
Unit
5.0
o
110
o
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 5
SID3310
-10A, -20V,RDS(ON)150mΩ
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
- 20
_
_
V
BVDS/ Tj
_
- 0.1
_
V/ C
VGS(th)
-0.5
_
_
IGSS
_
_
±100
nA
VGS=±12V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-25
uA
VDS=-16V,VGS=0
_
_
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
Static Drain-Source On-Resistance
IDSS
RD S (O N )
Max.
150
_
_
250
Total Gate Charge2
Qg
_
6
_
Gate-Source Charge
Qgs
_
1.5
_
Gate-Drain ("Miller") Charge
Qgd
_
0.6
_
Td(ON)
_
2.5
_
Tr
_
60
_
Td(Off)
_
70
_
Tf
_
60
_
300
_
180
_
60
_
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Ciss
_
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
4.4
Unit
o
V
mΩ
Test Condition
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=- 1mA
VDS=VGS, ID=-250uA
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2 A
nC
ID=- 2.8 A
VDS=- 6V
VGS=- 5V
VDD=-6 V
ID=-1A
nS
VGS=- 5V
RG=6Ω
RD=6 Ω
pF
VGS=0V
VDS=-6V
_
S
VDS=- 5V, ID=-2.8A
Max.
Unit
Test Condition
-1.2
V
IS=-10A,VGS=0V,Tj=25 C
VD=VG=0V,VS=-1.2
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage 2
Continuous Source Current (Body Diode)
1
Pulsed Source Current (Body Diode)
Symbol
Min.
Typ.
VSD
_
_
IS
_
_
-10
A
ISM
_
_
-24
A
o
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
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01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 5
SID3310
Elektronische Bauelemente
-10A, -20V,RDS(ON)150mΩ
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
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01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
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Page 3 of 5
SID3310
Elektronische Bauelemente
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 11. Forward Characteristics of
Reverse Diode
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01-Jun-2002 Rev. A
-10A, -20V,RDS(ON)150mΩ
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Effective Transient Thermal Impedance
Fig 10. Typical Capacitance Characteristics
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 4 of 5
SID3310
Elektronische Bauelemente
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-10A, -20V,RDS(ON)150mΩ
P-Channel Enhancement Mode Power Mos.FET
Any changing of specification will not be informed individual
Page 5 of 5