SMG1330N 2.0A , 30V , RDS(ON) 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(ON) and to ensure minimal power loss and heat dissipation. A L 3 3 C B Top View FEATURES 1 1 Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC59 saves board space. Fast switching speed. High performance trench technology. 2 K E 2 D F APPLICATION G REF. A B C D E F DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7 inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 2.0 A 1.7 A IDM ±20 A IS 1.6 A 0.34 W 0.22 W -55~150 °C Continuous Drain Current TA=25°C 1 TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 ID TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec 100 RθJA Steady State °C / W 166 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 29-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG1330N 2.0A , 30V , RDS(ON) 58 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit VGS(th) 1 - - V VDS=VGS, ID=250uA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 - - 10 10 - - - - 58 - - 82 gfs - 11.3 - S VDS=10V, ID=2A VSD - 0.75 - V IS=1.6A, VGS=0 Gate-Threshold Voltage On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 RDS(ON) Dynamic Qg - 7.5 - Gate-Source Charge Qgs - 0.6 - Gate-Drain Charge Qgd - 1 - Turn-on Delay Time Td(on) - 8 - Tr - 24 - Td(off) - 35 - Tf - 10 - Turn-off Delay Time Fall Time A VDS=24V, VGS=0 VDS=24V, VGS=0, TJ=55°C VDS =5V, VGS=10V mΩ VGS=10V, ID=2A VGS=4.5V, ID=1.7A 2 Total Gate Charge Rise Time µA Test Conditions nC VDS=10V, VGS=5V, ID=2A nS VDD=10V, VGEN=4.5V, RL=15Ω, ID=1A Notes: 1 Pulse test：PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 29-Aug-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2