SMG2317P -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 2 K E 2 D FEATURES F Low RDS(on) provides higher efficiency and extends battery life. Low Gate Charge Fast switch. Miniature SC-59 surface mount package saves board space. G REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage ID @ TA=25°C ID @ TA=70°C Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation Symbol Ratings Unit VDS VGS -30 ±20 -0.9 -0.75 -10 0.4 0.5 0.42 -55 ~ 150 V V A A A A W W °C 250 285 °C / W ID IDM IS PD @ TA=25°C PD @ TA=70°C 1 PD Tj, Tstg Thermal Resistance Data Operating Junction and Storage Temperature Range Maximum Junction to Ambient 1 Notes: 1 2 t ≦ 5 sec Steady State RJA Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 5 SMG2317P -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Switch Off Characteristics Drain-Source Breakdown Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS -30 - - V VDS= 0V, ID= -250uA IGSS - - ±100 nA VDS= 0V, VGS= ±20V - - -1 - - -10 IDSS VDS= -24V, VGS= 0V μA VDS= -24V, VGS= 0V, TJ= 55°C Switch On Characteristics Gate-Threshold Voltage VGS(th) -0.8 -1.7 -2.6 V VDS=VGS, ID= -250uA On-State Drain Current 1 ID(on) -2 - - A VDS = -5V, VGS= -4.5V - 250 300 - 530 660 - 450 500 Drain-Source On-Resistance 1 RDS(ON) VGS= -10V, ID= -1A mΩ VGS= -4.5V, ID= -0.9A,TJ= 55°C VGS= -4.5V, ID= -0.9A Forward Transconductance 1 gfs - 2 - S VDS= -5V, ID= -1.1A Diode Forward Voltage VSD - -0.7 -1.2 V IS= -0.4A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 2 3 Gate-Source Charge Qgs - 0.5 - Gate-Drain Charge Qgd - 1.1 - nC VDS= -10V, VGS= -5V, ID= -0.9A nS VDS= -10V, VGEN= -10V, RG= 50, ID= -0.9A Switching Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Notes: 1 2 Td(on) - 8 16 Tr - 16 32 Td(off) - 36 93 Tf - 33 94 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 5 SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 5 SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 5 SMG2317P Elektronische Bauelemente -0.9 A, -30 V, RDS(ON) 300 m P-Channel Enhancement Mode MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 5 of 5