SMG2371P -1A, -100V, RDS(ON) 1.2 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SC-59 Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. A L 3 3 C B Top View 1 1 2 K E 2 APPLICATIONS D PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters. White LED boost converters. F G REF. A B C D E F PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V TA=25°C Continuous Drain Current 1 TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range ID -1 -0.8 A IDM -10 A IS -1.6 A PD TJ, TSTG 1.3 0.8 -55 ~ 150 W °C Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec Steady-State RθJA 100 166 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 15-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG2371P -1A, -100V, RDS(ON) 1.2 P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static VGS(th) -1 - -3.5 V VDS=VGS, ID= -250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 - - -25 On-State Drain Current 1 ID(ON) -10 - - - - 1.2 - - 1.3 Gate-Source Threshold Voltage Drain-Source On-Resistance 1 RDS(ON) μA A Ω VDS= -80V, VGS=0 VDS= -80V, VGS=0, TJ=55°C VDS= -10V, VGS= -10V VGS= -10V, ID= -1A VGS= -4.5V, ID= -0.9A Forward Transconductance 1 gFS - 5 - S VDS= -15V,,ID= -1A Diode Forward Voltage VSD - -0.81 - V IS= -0.8A, VGS=0 Dynamic 2 Total Gate Charge Qg - 3.7 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 1.7 - Turn-On Delay Time Td(ON) - 3.5 - Tr - 3.8 - Td(OFF) - 15.5 - Tf - 10.3 - Input Capacitance Ciss - 358 - Output Capacitance Coss - 54 - Reverse Transfer Capacitance Crss - 29 - Rise Time Turn-Off Delay Time Fall Time nC ID= -1A VDS= -50V VGS= -4.5V nS VDD= -50V VGEN= -10V RL=50Ω ID= -1A RGEN=6Ω pF f=1MHz VDS= -15V VGS=0 Notes: 1. Pulse test：PW≦300 us duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 15-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2371P Elektronische Bauelemente -1A, -100V, RDS(ON) 1.2 P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 15-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2371P Elektronische Bauelemente -1A, -100V, RDS(ON) 1.2 P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 15-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4