SMG2301P -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 K 2 E 2 D FEATURES F Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. H G REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Drain Package MPQ LeaderSize SC-59 3K 7’ inch Gate Source MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25°C TA=70°C 1 2 Pulsed Drain Current Continuous Source Current (Diode Conduction) 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range Power Dissipation 1 Symbol Ratings Unit VDS VGS -20 ±8 -2.6 -1.5 -10 ±1.6 1.25 0.8 -55 ~ 150 V V ID IDM IS PD TJ, TSTG A A A W °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady-State RθJA 100 166 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SMG2301P -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static VGS(th) -0.4 - -1 V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 On-State Drain Current 1 ID(ON) -3 - - - - 0.130 - - 0.190 Gate-Threshold Voltage Drain-Source On-Resistance 1 RDS(ON) μA A Ω VDS = -16V, VGS= 0V VDS = -16V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -4.5V, ID = -2.6A VGS= -2.5V, ID = -2.1A Forward Transconductance 1 gFS - 3 - S VDS= -5V,,ID = -2.8A Diode Forward Voltage VSD - -0.70 - V IS= -1.6A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 12.2 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 1.5 - Turn-On Delay Time Td(ON) - 6.5 - Tr - 20 - Td(OFF) - 31 - Tf - 21 - Rise Time Turn-Off Delay Time Fall Time nC ID= -2.6A VDS= -5V VGS= -4.5V nS VDD= -5V VGEN= -4.5V RG= 6Ω RL= 5Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2301P Elektronische Bauelemente -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2301P Elektronische Bauelemente -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4