SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. A L 3 3 C B Top View 1 FEATURES 1 2 K Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space. E 2 D F G REF. A B C D E F APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDS VGS 30 ±20 3.5 2.8 16 V 1.25 1.3 0.8 A W -55 ~ 150 °C ID @ TA=25°C Continuous Drain Current 1 ID ID @ TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) IDM IS 1 PD @ TA=25°C Power Dissipation 1 PD @ TA=70°C Operating Junction and Storage Temperature Range PD Tj, Tstg V A A A W Thermal Resistance Rating Maximum Junction to Ambient 1 t ≦ 10 sec Steady State RJA 100 166 °C / W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Gate-Threshold Voltage VGS(th) 1.0 - - V VDS=VGS, ID=250uA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS=20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 6 - - - - 58 - - 82 gfs - 6.9 - S VDS=15V, ID=3.5A VSD - 0.8 - V IS=2.3A, VGS=0 On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) uA A VDS=24V, VGS=0 VDS=24V, VGS=0, TJ= 55°C VDS =5V, VGS=10V mΩ VGS=10V, ID=3.5A VGS=4.5V, ID=3A Dynamic 2 Total Gate Charge Qg - 2.2 - Gate-Source Charge Qgs - 0.5 - Gate-Drain Charge Qgd - 0.8 - Turn-on Delay Time Td(on) - 16 - Tr - 5 - Td(off) - 23 - Tf - 3 - Rise Time Turn-off Delay Time Fall Time nC VDS=15V, VGS=4.5V, ID=3.5A nS VDD=25V, VGEN=10V, RL=25, ID=1A Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2306N Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2306N Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4