SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. A L 3 3 C B Top View 1 1 2 K E 2 FEATURES D Low RDS(on) provides higher efficiency and extends battery life. Miniature SC-59 surface mount package saves board space. Fast switching speed. High performance trench technology. Low gate charge 7.2Nc. G H Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. F REF. A B C D E F G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 APPLICATION DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Symbol Ratings Unit VDS -20 V ±8 V VGS TA=25°C TA=70°C ID -4.1 -3.3 A Pulsed Drain Current 2 IDM ±10 A Continuous Source Current (Diode Conduction) 1 IS ±0.46 A Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG 1.25 0.8 -55 ~ 150 W °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t≦5 sec Steady-State RθJA 100 150 °C/W Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SMG2321P -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Threshold Voltage VGS(th) -0.4 - - V VDS=VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 -5 - - - - 0.079 - - 0.110 gFS - 9 - S VDS= -5V,,ID= -1.25A VSD - -0.65 - V IS= -0.46A, VGS=0 On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) μA A Ω VDS= -16V, VGS=0 VDS= -16V, VGS=0, TJ=55°C VDS= -5V, VGS= -4.5V VGS= -4.5V, ID= -4.1A VGS= -2.5V, ID= -3.2A Dynamic 2 Total Gate Charge Qg - 7.2 - Gate-Source Charge Qgs - 1.7 - Gate-Drain Charge Qgd - 1.5 - Input Capacitance CISS - 520 - Output Capacitance COSS - 130 - Reverse Transfer Capacitance CRSS - 70 - Turn-On Delay Time Td(ON) - 8 - Tr - 18 - Td(OFF) - 52 - Tf - 39 - Rise Time Turn-Off Delay Time Fall Time nC ID= -4.1A VDS= -10V VGS= -4.5V pF VDS=15V, VGS=0V, f=1MHz nS VDD= -10V VGEN= -4.5V RG=6Ω IL= -1A Notes: 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2321P Elektronische Bauelemente -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2321P Elektronische Bauelemente -4.1A , -20V , RDS(ON) 79 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Apr-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4