SMG2314 3.5A, 20V,RDS(ON)75mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The SMG2314 utilized advanced processing techniques to achieve the lowest possible on-resistance, extemely efficient and cost-effectiveness device. The SMG2314 is universally used for all commercial-industrial applications. A SC-59 L S 2 3 Top View B 1 Features D * Low On-Resistance * Capable Of 2.5V Gate Drive G J C K H Drain Marking : 2314 Gate Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm Source D Dim G S Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current, [email protected] Ratings Unit VDS 20 V VGS ±12 V o 3.5 A o ID@TA=70 C 2.8 A IDM 10 A 1.38 W 0.01 W / oC -55~+150 o ID@TA=25 C 3 Continuous Drain Current, [email protected] 1,2 Pulsed Drain Current o PD@TA=25 C Total Power Dissipation Linear Derating Factor Tj, Tstg Operating Junction and Storage Temperature Range C Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Max. Rthj-a Ratings 90 Unit o C /W Any changing of specification will not be informed individual Page 1 of 4 SMG2314 3.5A, 20V,RDS(ON)75mΩ Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current N-Channel Enhancement Mode Power Mos.FET Unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS 20 _ _ V BVDS/ Tj _ 0.02 _ VGS(th) 0.5 _ 1.2 IGSS _ _ _ _ _ _ _ _ o Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance Total Gate Charge 2 IDSS RDS(ON) Qg _ 6 8 Tf _ 3 Crss Forward Transconductance Gfs Gate Resistance Rg VDS=16V,VGS=0 75 _ ID=3A VDS=16V VGS=4.5V VDD=15V _ ID=1A nS 55 _ _ 40 _ RD=15Ω pF _ VGS=5V RG=3.3 Ω _ _ _ nC _ 370 7 VGS=2.5V, ID=1.2A _ 230 _ VGS=4.5V, ID=3.5A mΩ _ 10 Reverse Transfer Capacitance uA 2 _ Coss 10 _ Td(Off) Output Capacitance VDS=20V,VGS=0 0.7 _ Ciss uA 7 Td(ON) Input Capacitance 1 _ Turn-on Delay Time 2 Fall Time VGS=±12V 4 _ Turn-off Delay Time nA _ Qgd Tr ±100 125 Gate-Drain ("Miller") Charge o Reference to 25 C, ID=1mA VDS=VGS, ID=250uA _ Qgs VGS=0V, ID=250uA V _ Gate-Source Charge Rise Time o V/ C Test Condition VGS=0V VDS=20V f=1.0MHz S 1.1 1.7 Ω VDS=5V, ID=3A f=1.0MHz Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Change Symbol Min. Typ. Max. Unit Test Condition VDS _ _ 1.2 V IS=1.2 A, VGS=0V. Trr _ 16 _ nS Qrr _ 8 _ nC IS=3A,VGS=0V dl/dt=100A/us Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width≦300us, dutycycle≦2%. 3.Surface mounted on FR4 board, t≦10sec. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SMG2314 Elektronische Bauelemente 3.5A, 20V,RDS(ON)75mΩ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Char acteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Char acteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistan ce v.s. Ju nction Temperat ure Fig 6. Gate Threshold Voltage v.s. Ju nction Temperat ure Any changing of specification will not be informed individual Page 3 of 4 SMG2314 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 3.5A, 20V,RDS(ON)75mΩ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4