SMG2391P -0.9A , -150V , RDS(ON) 1.2 Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free SC-59 FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed A L 3 3 C B Top View 1 1 2 K E 2 APPLICATIONS D PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters F REF. A B C D E F PACKAGE INFORMATION Package MPQ SC-59 3K G Leader Size Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L TOP VIEW J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 7 inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current TA=25°C 1 -0.9 ID TA=70°C Pulsed Drain Current Power Dissipation 2 IDM TA=25°C 1 TA=70°C Continuous Source Current (Diode Conduction) 1 Operating Junction and Storage Temperature Range A -0.8 5 A 1.3 PD W 0.8 IS 1.5 A TJ, TSTG -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 1 t<= 10sec Steady State RθJA 100 166 °C / W Notes: 1. Surface mounted on 1”x1” FR4 board. 2. Pulse width limited by Max. junction temperature. http://www.SeCoSGmbH.com/ 27-Oct-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG2391P -0.9A , -150V , RDS(ON) 1.2 Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static On-State Drain Current ID(on) -0.5 - - A VDS= -5V,VGS= -10V Gate-Source Threshold Voltage VGS(th) -1 - - V VDS=VGS, ID= -250uA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0,VGS= ±20V - - -1 Drain-Source Leakage Current IDSS Drain-Source On-Resistance RDS(ON) µA - - -10 - - 1.2 VDS= -120V, VGS=0,TJ =55°C VGS= -10V, ID= -0.8A Ω - - 1.3 VDS= -120V, VGS=0 VGS= -4.5V, ID= -0.7A Forward Transconductance gfs - 2.2 - S VDS= -15V, ID= -0.5A Diode Forward Voltage VSD - -0.8 - V IS= -0.75A, VGS=0 Dynamic Total Gate Charge Qg - 3.4 - Gate-Source Charge Qgs - 1.3 - Gate-Drain Charge Qgd - 1.6 - Turn-on Delay Time Td(on) - 3 - Tr - 10 - Td(off) - 15 - Tf - 11 - Input Capacitance Ciss - 334 - Output Capacitance Coss - 41 - Reverse Transfer Capacitance Crss - 23 - Rise Time Turn-off Delay Time Fall Time nC VDS= -75V, VGS= -4.5V, ID= -0.8A nS VDD= -75V, VGEN= -10V, RGEN=6Ω, RL=93.8Ω, ID= -0.8A pF VDS= -15V, VGS=0, f=1.0MHz Notes: 1. Pulse test : PW≦300µs, duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 27-Oct-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2391P Elektronische Bauelemente -0.9A , -150V , RDS(ON) 1.2 Ω P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Oct-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2391P Elektronische Bauelemente -0.9A , -150V , RDS(ON) 1.2 Ω P-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Oct-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4