SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 K FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space. RDS(on) (m 194@VGS= 10V 273@VGS= 4.5V 60 E 2 D F PRODUCT SUMMARY SMG2398NE VDS(V) 2 H G REF. A B C D E F ID(A) 2.2 1.8 Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage ID @ TA=25°C ID @ TA=70°C Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 V V A A A A W W °C Symbol Maximum Unit RJA 100 166 °C / W ID PD Tj, Tstg Operating Junction and Storage Temperature Range Unit 60 ±20 2.2 1.7 ±15 1.7 1.3 0.8 -55 ~ 150 IDM IS PD @ TA=25°C PD @ TA=70°C Power Dissipation 1 Ratings Maximum THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient 1 t ≦ 5 sec Steady State Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 25-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2398NE 2.2 A, 60 V, RDS(ON) 194 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 1 Drain-Source On-Resistance 1 Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 1.0 - - V VDS=VGS, ID= 250uA IGSS - - ±100 nA VDS= 0V, VGS= ±20V - - 1 - - 50 10 - - - - 194 IDSS ID(on) VDS= 48V, VGS= 0V uA RDS(ON) VDS= 48V, VGS= 0V, TJ= 55°C A VDS = 5V, VGS= 10V VGS= 10V, ID= 2.2A mΩ - - 273 VGS= 4.5V, ID= 1.8A Forward Transconductance 1 gfs - 8 - S VDS= 4.5V, ID= 2.2A Diode Forward Voltage VSD - - 1.2 V IS= 1.7A, VGS= 0V DYNAMIC 2 Total Gate Charge Qg - 4.0 - Gate-Source Charge Qgs - 4.0 - Gate-Drain Charge Qgd - 2.0 - Turn-on Delay Time Td(on) - 10 - Tr - 10 - Td(off) - 20 - Tf - 10 - TRR - 50 - Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time nC VDS= 30V, VGS= 5V, ID= 2.2A VDD= 30V, VGEN= 10V, RL= 30, ID= 1A nS IF=1.7A, di/dt=100 A / uS Notes 1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 25-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2