SMG2339P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density process Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 K FEATURES Low RDS(on) provides higher efficiency and extends battery life. Fast Switch. Low Gate Charge. Miniature SC-59 surface mount package saves board space. 2 E D F G REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -30 RDS(on) ( 0.057@VGS= -4.5V 0.089@VGS= -2.5V ID(A) -3.6 -2.8 2 A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 Drain Gate Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B Continuous Source Current (Diode Conduction) A SYMBOL RATING UNIT VDS VGS -30 ±12 ±3.6 ±2.9 ±10 0.4 1.25 0.8 -55 ~ 150 V V ID IDM IS TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦5 sec Maximum Junction to Ambient A RθJA Steady-State Power Dissipation A 100 150 A A A W °C °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 07-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2339P -3.6 A, -30 V, RDS(ON) 0.057 P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) -0.80 - - V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±12V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 On-State Drain Current A ID(ON) -2 - - - - 57 - - 89 Drain-Source On-Resistance A RDS(ON) μA A mΩ VDS = -24V, VGS= 0V VDS = -24V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -4.5V, ID = -3.6A VGS= -2.5V, ID = -2.8A Forward Transconductance A gFS - 2 - S VDS= -5V,,ID = -3.6A Diode Forward Voltage VSD - -0.70 - V IS= -0.4A, VGS= 0V Dynamic b Total Gate Charge Qg - 25 - Gate-Source Charge Qgs - 2.4 - Gate-Drain Charge Qgd - 3.9 - VGS= -5V Turn-On Delay Time Td(ON) - 7.6 - VDS= -15V Tr - 6.8 - Td(OFF) - 33.6 - Tf - 23.2 - Rise Time Turn-Off Delay Time Fall Time ID= -3.6A nC nS VDS= -10V ID= -1A VGEN= -10V RG= 50Ω Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 07-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2