SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS(ON) 49mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. TO-252(D-Pack) FEATURES Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. A B C D GE PRODUCT SUMMARY VDS(V) -60 PRODUCT SUMMARY RDS(on) m( 49@VGS= -10V 60@VGS= -4.5V K ID(A) 28 24 M REF. Gate A B C D E F G H Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current a b Continuous Source Current (Diode Conduction) Total Power Dissipation N O P J Drain Continuous Drain Current HF a a Operating Junction and Storage Temperature Range Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 UNIT VDS -60 V VGS ±20 V ID @TA=25℃ 61 A IDM ±40 A IS -30 A PD @TA=25℃ 50 W TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 16-Aug-2010 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS(ON) 49mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) -1 - - Gate-Body Leakage IGSS - - ±100 Zero Gate Voltage Drain Current IDSS - - -1 - - -10 On-State Drain Current a ID(on) -20 - - - - 49 - - 60 VDS= VGS, ID = -250 μA nA μA A VDS = 0V, VGS= ±20V VDS= -48V, VGS= 0V VDS= -48V, VGS=0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -28A Drain-Source On-Resistance a RDS(ON) Forward Transconductance a gfs - 8 - S VDS= -15V, ID= -28A Diode Forward Voltage VSD - - -1.2 V IS= -2.5 A, VGS= 0 V mΩ VGS= -4.5V, ID= -24A Dynamic b Total Gate Charge Qg - 18 - Gate-Source Charge Qgs - 5 - Gate-Drain Charge Qgd - 2 - Turn-on Delay Time Td(on) - 8 - Tr - 10 - Td(off) - 35 - Tf - 12 - Rise Time Turn-off Delay Time Fall Time nC VDS = -30 V VGS = -4.5 V ID = -28 A nS VDD= -30 V ID= -1 A VGEN = -10 V RL= 30 RG= 6 Notes a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 16-Aug-2010 Rev.A Any changes of specification will not be informed individually. Page 2 of 4 SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS(ON) 49mΩ Elektronische Bauelemente CHARACTERISTIC CURVE 15 15 VGS = -10V T A = -55oC -4.5V ID - Drain Current (A) ID - Drain Current (A) 25oC 12 12 9 6 125oC 9 6 3 3 0 0 0 1 2 3 4 1 5 2 3 4 5 V GS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2400 C - Capacitance (pF) rDS(ON) - Normalized On-Resistance 1.8 1.6 1.4 -4.5V 1.2 -10V 1 2000 1600 Ciss 1200 Coss 800 Crss 400 0 0 0.8 0 2 4 6 8 5 10 20 25 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 2 rDS(ON) - On-Resistance Normalized -10 -8 Vgs Voltage ( V ) 15 10 -6 -4 -2 VGS = -10V 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 0 6 12 18 24 Qg, Charge (nC) Gate Charge http://www.SeCoSGmbH.com/ 16-Aug-2010 Rev.A 30 36 -50 -25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature On-Resistance vs. Junction Temperature Any changes of specification will not be informed individually. Page 3 of 4 SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS(ON) 49mΩ Elektronische Bauelemente CHARACTERISTIC CURVE 0.4 10 rDS(ON) - On-Resistance (OHM) IS - Source Current (A) 100 T A = 125oC o 25 C 1 0.1 0.01 0.001 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 2 1.4 4 V SD - Source-to-Drain Voltage (V) 6 8 10 V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 50 1.9 ID = -250μA V GS(th), Variance (V) 1.8 40 1.7 30 1.6 1.5 20 1.4 1.3 10 1.2 1.1 -50 -25 0 25 50 75 100 125 0 0.001 150 0.01 o 0.1 1 10 100 1000 T i me ( sec) TJ - Temperature ( C) Threshold Voltage Single Pulse Power 1 D = 0.5 Normalized Effective Transient Thermal Impedance RθJA(t) = r(t) + R θJA R θJA = 125 oC/W 0.2 0.1 0.1 P(pk) TJ - TA = P * R θJA(t) Duty Cycle, D = t1 / t2 t1 0.05 0.02 0.01 t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient http://www.SeCoSGmbH.com/ 16-Aug-2010 Rev.A Any changes of specification will not be informed individually. 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