SSD9575
-15A, -60V,RDS(ON)90m Ω
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
Description
TO-252
The SSD9575 provide the designer with the best combination of
fast switching, ruggerized device device design, low on-resistance
and cost -effectiveness.
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Features
* Low On-Resistance
* Simple Drive Requirement
* Fast Switching
D
REF.
A
B
C
D
E
F
S
G
S
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
6.80
7.20
2.20
2.80
2.30 REF.
0.70
0.90
0.60
0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min.
Max.
0.50
0.70
2.20
2.40
0.45
0.55
0
0.15
0.90
1.50
5.40
5.80
0.80
1.20
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
o
Continuous Drain Current,VGS@10V
ID@TC=25 C
Continuous Drain Current,VGS@10V
o
Pulsed Drain Current
ID@TC= 100 C
1
IDM
o
Total Power Dissipation
PD@TC=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Ratings
Unit
-60
V
± 25
V
-15
A
-9.5
A
-45
A
36
W
0.29
W/ C
o
o
C
-55~+150
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
3.5
o
Thermal Resistance Junction-ambient
Max.
Rthj-a
110
o
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
C /W
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSD9575
-15A, -60V,RDS(ON)90m Ω
P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
BVDSS
- 60
_
BVDS/ Tj
_
VGS(th)
IGSS
o
Drain-Source Leakage Current (Tj=25 C )
o
Drain-Source Leakage Current(Tj=150C)
2
Static Drain-Source On-Resistance
IDSS
RD S (O N )
- 0.06
_
V/ C
-1.0
_
-3.0
V
_
_
±100
nA
VGS=±25V
_
_
-1
uA
VDS=-60V,VGS=0
_
_
-25
uA
VDS=-48V,VGS=0
_
_
_
_
Gate-Source Charge
Qgs
_
Gate-Drain ("Miller") Charge
Qgd
Turn-off Delay Time
Fall Time
Input Capacitance
_
Tr
_
Td(Off)
_
Tf
_
_
_
o
90
_
120
17
27
_
5
_
Td(ON)
Ciss
Test Condition
V
Qg
Rise Time
Unit
_
Total Gate Charge2
Turn-on Delay Time2
Max.
6
_
10
_
19
_
46
_
53
_
1660
2660
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
14
Symbol
Min.
Typ.
160
100
mΩ
VGS=0V, ID=-250uA
o
Reference to 25 C, ID=- 1mA
VDS=VGS, ID=-250uA
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-9A
nC
ID=-9A
VDS=-48V
VGS=-4.5V
VDD=-30V
ID=-9A
nS
VGS=-10 V
RG=3.3 Ω
RD=3.3Ω
pF
VGS=0V
VDS=25V
_
S
VDS=-10V, ID=-9A
Max.
Unit
-1.2
V
IS=-9 A, VGS=0V.
nS
IS=-9A, VGS=0V.
_
f=1.0MHz
_
Source-Drain Diode
Parameter
Forward On Voltage 2
Reverse Recovery Time
2
Reverse Recovery Change
VSD
_
_
Trr
_
56
_
159
_
Qrr
_
nC
Test Condition
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSD9575
Elektronische Bauelemente
-15A, -60V,RDS(ON)90m Ω
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSD9575
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
-15A, -60V,RDS(ON)90m Ω
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4