SSG4410 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSG4410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 B L D M FEATURES A Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching N J H MARKING G REF. A B C D E F G 4410SC C = Date Code Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize S D SOP-8 3K 13’ inch S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Symbol Ratings Unit VDS 30 V VGS ±20 V ID @ TA = 25°C 10 A ID @ TA = 70°C 8 A Pulsed Drain Current 1 IDM 50 A Total Power Dissipation PD Linear Derating Factor Operating Junction & Storage Temperature Range TJ, TSTG 2.5 W 0.02 W / °C -55 ~ 150 °C 50 °C / W Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.) http://www.SeCoSGmbH.com/ 23-Dec-2010 Rev. B RθJA Any changes of specification will not be informed individually. Page 1 of 5 SSG4410 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(TJ=25°C) Drain-Source Leakage Current(TJ=55°C) Symbol Min. Typ. Max. Unit BVDSS 30 - - V △BVDSS / △TJ - 0.037 - V / °C VGS(th) gfs IGSS 1.0 - 20 - 3.0 ±100 V S nA VDS=VGS, ID =250uA VDS=15V, ID =10A VGS=±20V - - 1 μA VDS=30V, VGS=0V - - 25 μA VDS=24V, VGS=0V mΩ VGS=10V, ID=10A VGS=4.5V, ID=5A nC VDS=15V, ID =10A, VGS=5V nS VDS=25V, VGS=5V I D=1A, RD=25Ω, RG=3.3Ω pF VDS=15V VGS=0V f=1.0MHz RDS(ON) Total Gate Charge 2 Gate-Source Chagre Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Td(ON) Tr Td(OFF) Tf CISS COSS CRSS VSD Continuous Source IS Current (Body Diode) Pulsed Source ISM Current (Body Diode) 1 Notes: 1. Pulse width limited by safe operating area. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2％. http://www.SeCoSGmbH.com/ 23-Dec-2010 Rev. B VGS=0V, ID =250uA Reference to 25°C, ID=1mA IDSS Static Drain-Source On-Resistance Forward On Voltage 2 Teat Conditions 11.5 13.5 16.5 20 20 3 11 7.5 10.2 29 33 955 555 204 Source-Drain Diode - - 1.3 V IS=2.3A, VGS= 0V, TJ=25°C - - 2.3 A VD = VG = 0V, VS= 1.3V - - 50 A Any changes of specification will not be informed individually. Page 2 of 5 SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 5 SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 5 SSG4410 Elektronische Bauelemente 10 A, 30V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 23-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 5 of 5