SSG4499P -6.8 A, -60 V, RDS(ON) 45 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B L D FEATURES M Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J H REF. APPLICATION A B C D E F G DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ Leader Size SOP-8 2.5K 13’ inch G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V -6.8 A -6.3 A IDM -30 A IS -2.5 A 3.1 W 2.6 W -55 ~ 150 °C 50 °C / W TA = 25°C Continuous Drain Current 1 Pulsed Drain Current TA = 70°C 2 Continuous Source Current (Diode Conduction) 1 TA = 25°C Total Power Dissipation 1 TA = 70°C Operating Junction & Storage Temperature Range ID PD TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSG4499P -6.8 A, -60 V, RDS(ON) 45 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 On-State Drain Current 1 ID(on) -20 - - - - 45 - - 60 Drain-Source On-Resistance 1 RDS(ON) μA A mΩ VDS= -48V, VGS=0 VDS= -48V, VGS=0, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -6.8A VGS= -4.5V, ID= -5.9A Forward Transconductance 1 gfs - 8 - S VDS= -15V, ID= -6.8A Diode Forward Voltage VSD - - -1.2 V IS= -2.5A, VGS=0 Dynamic 2 Total Gate Charge Qg - 18 - Gate-Source Charge Qgs - 5 - Gate-Drain Charge Qgd - 2 - Turn-On Delay Time Td(on) - 8 - Tr - 10 - Td(off) - 35 - Tf - 12 - Rise Time Turn-Off Delay Time Fall Time nC ID= -6.8A VDS= -30V VGS= -4.5V nS VDD= -30V ID= -1A VGEN= -10V RL=30Ω RG=6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 07-Apr-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2