SECOS SSG4462N

SSG4462N
9.7 A, 60 V, RDS(ON) 22 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
SOP-8
B
L
D
M
FEATURES




A
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
N
J
H
PACKAGE INFORMATION
REF.
Package
MPQ
LeaderSize
SOP-8
2.5K
13’ inch
C
A
B
C
D
E
F
G
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
K
F
REF.
H
J
K
L
M
N
E
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
D
S
D
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA = 25°C
TA = 70°C
Pulsed Drain Current 2
Ratings
Unit
VDS
60
V
VGS
±20
V
ID
9.7
A
ID
8.0
25
A
IDM
Continuous Source Current (Diode Conduction)
Total Power Dissipation 1
Symbol
1
A
IS
2
A
TA = 25°C
PD
3.1
W
TA = 70°C
PD
2
W
TJ, TSTG
-55 ~ 150
°C
40
°C / W
80
°C / W
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient a
t ≦ 10 sec
Steady State
RθJA
Notes:
1
Surface Mounted on 1” x 1” FR4 Board.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
SSG4462N
9.7 A, 60 V, RDS(ON) 22 m
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
-
-
V
VDS= VGS, ID= 250μA
-
-
±100
nA
VDS= 0V, VGS= 20V
-
-
1
μA
VDS= 60V, VGS= 0V
Static
Gate-Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current 1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
Diode Forward Voltage
1
RDS(ON)
1
-
-
10
μA
VDS= 60V, VGS= 0V, TJ= 55°C
20
-
-
A
VDS= 5V, VGS= 10V
-
-
38
-
-
50
-
11
-
S
VDS= 15V, ID= 5.2A
-
0.7
-
V
IS= 2.0A, VGS= 0V
2
Qg
-
8.5
-
Gate-Source Charge
Qgs
-
3.3
-
Gate-Drain Charge
Qgd
-
4.0
-
Turn-On Delay Time
Td(on)
-
18
-
Tr
-
59
-
Td(off)
-
37
-
Tf
-
9
-
Fall Time
VGS= 4.5V, ID= 5.9A
gfs
Total Gate Charge
Turn-Off Delay Time
VGS= 10V, ID= 6.7A
VSD
Dynamic
Rise Time
mΩ
nC
ID= 6.7A
VDS= 30V
VGS= 4.5V
nS
VDD= 30V
ID= 1A
VGEN= 10V
RL= 30Ω
Notes:
1
Pulse test:PW ≦ 300μs duty cycle ≦ 2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2