SSG4874N 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L M A C N FEATURES D J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. H REF. A B C D E F G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch D S S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit VDS 30 V Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 VGS 20 V ID @ TA = 25°C 16.8 A ID @ TA = 70°C 14.2 A IDM 50 A IS 2.3 A PD @ TA = 25°C 3.1 W Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range PD @ TA = 70°C 2.2 W TJ, TSTG -55 ~ 150 °C 40 °C / W 80 °C / W Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4874N 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static VGS(th) 1 1.5 3 V VDS= VGS, ID= 250μA Gate-Body Leakage Current IGSS - 1.2 100 nA VDS= 0V, VGS= 20V - 10 1 μA VDS= 24V, VGS= 0V Zero Gate Voltage Drain Current IDSS - - 5 μA VDS= 24V, VGS= 0V, TJ= 55°C 40 - - A VDS= 5V, VGS= 10V - 7 9 Gate Threshold Voltage On-State Drain Current 1 Drain-Source On-Resistance 1 ID(on) RDS(ON) VGS= 10V, ID= 16.8A mΩ - 9 12 VGS= 4.5V, ID= 16.1A Forward Transconductance 1 gfs - 40 - S VDS= 15V, ID= 16.8A Diode Forward Voltage VSD - 0.7 - V IS= 2.3A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 15 40 Gate-Source Charge Qgs - 3 10 Gate-Drain Charge Qgd - 5 20 Input Capacitance Ciss - 1642 4000 Output Capacitance Coss - 579 2000 Reverse Transfer Capacitance Crss - 279 600 Turn-On Delay Time Td(on) - 15 40 Tr - 10 30 Td(off) - 54 110 Tf - 26 60 Rise Time Turn-Off Delay Time Fall Time nC ID= 16.8A VDS= 15V VGS= 4.5V pF VDS= 15V VGS= 0V f= 1MHz nS VDD= 15V ID= 1A VGEN= 10V RL= 6Ω Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4874N Elektronische Bauelemente 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4874N Elektronische Bauelemente 16.8 A, 30 V, RDS(ON) 9 m N-Channel Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 4