SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. B L D M A C N J FEATURES H Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F G K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch S D G D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA = 25°C TA = 70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Symbol Ratings Unit VDS 40 V VGS ±20 V 4.4 A ID 3.6 A IDM ±50 A IS 2.3 A 2.1 W PD @ TJ, TSTG 1.3 W -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA 62.5 °C / W 110 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 2 SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS(ON) 75 m Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current VBR(DSS) 30 - - VGS(th) 1 - - IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 RDS(ON) V VGS= 0V, ID= 250μA VDS= VGS, ID= 250μA - - ±100 nA VDS= 0V, VGS= 20V - - 1 μA VDS= 24V, VGS= 0V - - 25 μA VDS= 24V, VGS= 0V, TJ= 55°C 20 - - A VDS= 5V, VGS= 10V - - 80 - - 100 mΩ VGS= 10V, ID= 4.4A VGS= 4.5V, ID= 3.9A Forward Transconductance 1 gfs - 40 - S VDS= 15V, ID= 4.4A Diode Forward Voltage VSD - 0.7 - V IS= 2.3A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 20 - Gate-Source Charge Qgs - 7.0 - Gate-Drain Charge Qgd - 7.0 - nC ID= 4.4A VDS= 15V VGS= 5V nS VDD= 25V ID= 1A VGEN= 10V RL= 25Ω Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) - 20 - Tr - 9 - Td(off) - 70 - Tf - 20 - Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2