SSG6612N 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES A Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. N J H PACKAGE INFORMATION REF. Package MPQ LeaderSize SOP-8 2.5K 13’ inch C A B C D E F G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Unit 30 V VGS ±20 V 9.4 A ID @ TA = 70°C 7.4 30 A IDM IS 1.6 A PD @ TA = 25°C 3.1 W 1 Total Power Dissipation 1 Ratings VDS ID @ TA = 25°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Symbol A PD @ TA = 70°C 2 W TJ, TSTG -55 ~ 150 °C 50 °C / W 92 °C / W Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS Maximum Junction to Ambient a t ≦ 10 sec Steady State RθJA Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSG6612N 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions - - V VDS= VGS, ID= 250μA - - ±100 nA VDS= 0V, VGS= ±20V - - 1 μA VDS= 24V, VGS= 0V Static Gate-Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) 1 - - 25 μA VDS= 24V, VGS= 0V, TJ= 55°C 20 - - A VDS= 5V, VGS= 10V - - 22 - - 30 - 40 - S VDS= 15V, ID= 9.2A - 0.7 - V IS= 2.3A, VGS= 0V 2 Qg - 4.0 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 1.4 - Input Capacitance CISS - 720 - Output Capacitance COSS - 165 - Reverse Transfer Capacitance CRSS - 60 - Turn-On Delay Time Td(on) - 16 - Tr - 5 - Td(off) - 23 - Tf - 3 - Fall Time VGS= 4.5V, ID= 7A gfs Total Gate Charge Turn-Off Delay Time VGS= 10V, ID= 9.2A VSD Dynamic Rise Time mΩ nC ID= 7A VDS= 10V VGS= 4.5V pF f = 1 MHz VDS= 15V VGS= 0V nS VDD= 10V ID= 1A VGEN= 10V RL= 6Ω Notes: 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG6612N Elektronische Bauelemente 9.4 A, 30 V, RDS(ON) 22 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 06-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4