SSG9435 P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SSG9435 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Simple Drive Requirement Lower On-resistance Fast Switching Performance PACKAGE DIMENSIONS Date Code D D D D 8 7 6 5 SOP-8 D 9435SC G 1 2 3 4 S S S G 0.19 0.25 0.40 0.90 45 o 0.375 REF 6.20 5.80 0.25 S 3.80 4.00 1.27Typ. 0.35 0.49 4.80 5.00 0.100.25 o 0 o 8 1.35 1.75 Dimensions in millimeters ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Symbol P-ch Ratings Unit VDS -30 V VGS ±20 V 3 ID @Ta=25℃ -5.3 A 3 ID @Ta=70℃ -4.7 A Pulsed Drain Current , IDM -20 A Total Power Dissipation PD @Ta=25℃ 2.5 W Tj, Tstg -55 ~ +150 ℃ 0.02 W/℃ Continuous Drain Current ,VGS@ 10V Continuous Drain Current ,VGS@ 10V 1 Operating Junction and Storage Temperature Range Linear Derating Factor THERMAL DATA Parameter Thermal Resistance Junction-ambient 10-Aug-2010 Rev. C Max. Symbol Value Unit Rθj-amb 50 ℃ /W Page 1 of 5 SSG9435 P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ Elektronische Bauelemente P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit BVDSS -30 - - V - -0.037 - VGS(th) -1.0 - -3.0 V VDS=VGS, ID=-250uA gfs - 10 - S VDS=-10V, ID=-5.3A IGSS - - ±100 nA VGS= ±16V - - -1 uA VDS=-30V, VGS=0 - - -5 uA VDS=-24V, VGS=0 - - 55 - - 90 Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=70℃) Static Drain-Source On-Resistance △ BVDSS/△Tj IDSS RDS(ON) Test Conditions VGS=0, ID=-250uA V/℃ Reference to 25℃, ID=-1mA mΩ VGS=-10V, ID=-5.3A VGS=-4.5 V, ID=-4.2 A Total Gate Charge2 Qg - 28 - Gate-Source Charge Qgs - 3 - Gate-Drain (“Miller”) Change Qgd - 7 - Td(on) - 9 - Tr - 15 - Td(off) - 75 - Tf - 40 - Input Capacitance Ciss - 745 - Output Capacitance Coss - 440 - Reverse Transfer Capacitance Crss - 120 - Symbol Min. Typ. Max. Unit Test Conditions VSD - -0.75 -1.2 V IS=-2.6A, VGS=0 V, TJ=25°C IS - - -2.6 A ISM - - -20 A VD = VG = 0V, VS = -1.2 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=-5.3 A VDS=-15 V VGS=-10 V ns VDS=-15 V ID=-1 A VGS=-10 V RG=6 Ω RD=15 Ω pF VGS=0 V VDS=-15 V f=1.0 MHz SOURCE-DRAIN DIODE Parameter Forward On Voltage2 Continuous Source Current (Body Diode) 1 Pulsed Source Current (Body Diode) Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width≦300us, duty cycle≦2%. 10-Aug-2010 Rev. C Page 2 of 5 SSG9435 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ CHARACTERISTIC CURVE 10-Aug-2010 Rev. C Page 3 of 5 SSG9435 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ CHARACTERISTIC CURVE (cont’d) 10-Aug-2010 Rev. C Page 4 of 5 SSG9435 Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -5.3 A, -30 V, RDS(ON) 55 mΩ CHARACTERISTIC CURVE (cont’d) 10-Aug-2010 Rev. C Page 5 of 5