SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B D C FEATURES θ Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. e E A b d g APPLICATION F DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. G REF. A B C D E F G PACKAGE INFORMATION Package MPQ Leader Size SOP-8PP 3K 7’ inch Millimeter Min. Max. 1.00 1.10 5.70 5.80 0.20 0.30 3.61 3.98 5.40 6.10 0.08 0.20 3.60 3.99 REF. θ b d e g Millimeter Min. Max. 0° 12° 0.33 0.51 1.27BSC 1.35 1.75 1.10 - S D S D S D G D ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range ID -17 -14 A IDM -50 A IS -2.1 A PD TJ, TSTG 5.0 3.2 -55~150 W °C Thermal Resistance Rating Maximum Junction to Ambient 1 t≦10 sec Steady-State RθJA 25 65 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 01-May-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSP7431P -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V(BR)DSS -30 - - V VGS=0, ID = -250μA VGS(th) -1 - - V VDS=VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±25V Zero Gate Voltage Drain Current IDSS - - -1 - - -5 -50 - - - - 13 - - 19 gFS - 29 - S VDS= -15V,,ID= -11.5A VSD - -0.8 - V IS=2.5A, VGS=0 Gate-Threshold Voltage On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) Dynamic Qg - 25 - Gate-Source Charge Qgs - 11 - Gate-Drain Charge Qgd - 17 - Turn-On Delay Time Td(ON) - 15 - Tr - 13 - Td(OFF) - 100 - Tf - 54 - Turn-Off Delay Time Fall Time A mΩ VDS= -24V, VGS=0 VDS= -24V, VGS=0, TJ=55°C VDS= -5V, VGS= -10V VGS= -10V, ID= -11.5A VGS= -4.5V, ID= -9.3A 2 Total Gate Charge Rise Time μA nC ID= -11.5A VDS= -15V VGS= -5V nS ID= -1A, VDD= -15V VGEN= -10V RL=6Ω Notes: 1. Pulse test：PW ≦ 300 μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 01-May-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSP7431P Elektronische Bauelemente -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-May-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSP7431P Elektronische Bauelemente -17A, -30V, RDS(ON) 13 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-May-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4