SSP7430N 17 A, 30 V, RDS(ON) 13 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. D C θ e FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. E A b d g F G PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 30 RDS(on) (m 13@VGS= 10V 20@VGS= 4.5V REF. ID(A) 17 13 A B C D E F G Drain Millimeter Min. Max. 1.00 1.10 5.70 5.80 0.20 0.30 3.61 3.98 5.40 6.10 0.08 0.20 3.60 3.99 REF. θ b d e g Millimeter Min. Max. 0° 12° 0.33 0.51 1.27BSC 1.35 1.75 1.10 - Gate Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C B Pulsed Drain Current Continuous Source Current (Diode Conduction) A SYMBOL RATING UNIT VDS VGS 30 20 16 13 50 2.3 5.0 3.2 -55 ~ 150 V V ID IDM IS TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦10 sec Maximum Junction to Ambient A RθJA Steady-State Power Dissipation A 25 65 A A A W °C °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 28-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSP7430N 17 A, 30 V, RDS(ON) 13 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) 1 - - V VDS = VGS, ID = 250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= 20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 On-State Drain Current A ID(ON) 20 - - - - 13.5 - - 20 Drain-Source On-Resistance A RDS(ON) μA A mΩ VDS = 24V, VGS= 0V VDS = 24V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 10V VGS= 10V, ID = 17A VGS= 4.5V, ID = 13A Forward Transconductance A gFS - 40 - S VDS= 15V,,ID = 17A Diode Forward Voltage VSD - 0.7 - V IS= 2.3A, VGS= 0V Dynamic b Total Gate Charge Qg - 12.5 - Gate-Source Charge Qgs - 2.6 - Gate-Drain Charge Qgd - 4.6 - Turn-On Delay Time Td(ON) - 20 - Tr - 9 - Td(OFF) - 70 - Tf - 20 - Rise Time Turn-Off Delay Time Fall Time ID= 17A nC VDS= 15V VGS= 4.5V ID= 1A, VDD= 25V nS VGEN= 10V RL= 25Ω Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 28-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2